Table of wafer of polishing apparatus, method for polishing semiconductor wafer, and method for manufacturing semiconductor wafer
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Example
REFERENTIAL EXAMPLE 1-1
[0050] In referential example 1-1, “beta random (trade name)”, product of IBIDEN KABUSHIKI KAISHA, was used as silicon carbide powder that contained 94.6 weight percent of β type crystals. The average crystal particle diameter of this powder was 1.3 micrometers. The powder contained 1.5 weight percent of boron and 3.6 weight percent of free carbon.
[0051] First, 5 weight parts of polyvinyl alcohol and 300 weight parts of water were added to 100 weight parts of the silicon carbide powder. The mixture was then stirred in a ball mill for five hours to obtain a uniform mixture. The mixture was dried for a predetermined time to remove a certain amount of moisture from the mixture. An appropriate amount of the dry mixture was then sampled and granulated. Next, the granules of the dry mixture were subjected to molding with metal press dies at a pressure of 50 kg / cm2. The density of the resulting molded body was 1.2 g / cm3.
[0052] Subsequently, the molded body was pla...
Example
REFERENTIAL EXAMPLE 1-2
[0056] In referential example 1-2, α type silicon carbide powder (more specifically, “OY15 (trade name)”, product of YAKUSHIMA DENKO KABUSHIKI KAISHA) was employed in lieu of the β type. The density of each resulting base 11A, 11B was 3.1 g / cm3. The heat conductivity of each base 11A, 11B was 125 W / m·K. Each base 11A, 11B contained 0.4 weight percent of boron and 1.8 weight percent of free carbon. The heat conductivity of the bases 11A, 11B in referential example 1-1, in which the β type powder was the starting material, was approximately 20 percent higher than that of referential example 1-2.
[0057] After the table 2 was obtained through the same procedure as referential example 1-1, the table 2 was installed in the various types of apparatuses 1 to polish the semiconductor wafers 5 of different dimensions. Accordingly, substantially the same advantageous results as those of referential example 1-1 were obtained.
[0058] The first embodiment has the following...
Example
REFERENTIAL EXAMPLE 2-1
[0081] In referential example 2-1, like referential example 1-1, the bases 11A, 11B, which were formed of sintered silicon carbide bodies, were molded, using silicon carbide powder that contained β type crystals as a starting material, and calcinated. Further, the copper pipe 16, the diameter of which was 6 millimeters, was prepared and bent into a predetermined shape.
[0082] Next, the groove 13, the depth of which was 10 millimeters and the width of which was 10 millimeters, was ground in the upper side of the lower base 11B. The curved portion of the copper pipe 16 was then fitted in the groove 13. In this state, the bases 11A, 11B were integrally adhered together with an epoxy resin type adhesive agent. The thickness of the adhesive agent layer 14 was approximately 20 micrometers. Further, the upper side of the upper base 11A was polished to complete the table 2.
[0083] The resulting table 2 of referential example 2-1 was installed in the aforementioned va...
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