High energy, real time capable, direct radiation conversion X-ray imaging system for Cd-Te and Cd-Zn-Te based cameras

a technology of cd-te and cd-zn-te, which is applied in the field of high energy charge integration imaging devices, can solve the problems of preventing any increase in accuracy, increasing the time of pixel charge integration, and reducing the image frame acquisition rate, so as to achieve high energy and high image frame acquisition rate. , the effect of high energy

Inactive Publication Date: 2006-01-19
OY AJAT LTD
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Benefits of technology

[0012] The present invention is a high energy, direct radiation conversion, real time X-ray imaging system. More specifically, the present real time X-ray imaging system is in tended for use with Cd—Te and Cd—Zn—Te based cameras. The present invention is particularly useful in X-ray imaging systems requiring high image frame acquisitions rates in the presence of non linear pixel performance. The present invention is “high energy” in that it is intended for use with X-ray and gamma ray radiation imaging systems having a

Problems solved by technology

Therefore, in these current imaging systems, increasing accuracy requires increasing the pixel charge integration time.
Unfortunately, errors inherent in current imaging systems limit the length of a charge integration cycle to just a few seconds at most, before the signal-to-noise ratio first “saturates” and then becomes so bad as to preclude any increase in accuracy with increasing charge integration time.
Designing and manufacturing a sensitive, high energy radiation-imaging device is a very complex task.
Although great progress has been made in the research and development of semiconductor radiation imaging devices, a large number of old performance issues remain and certain new performance issues have developed.
Some of the new performance issues result from solving other even more severe performance problems, while some

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  • High energy, real time capable, direct radiation conversion X-ray imaging system for Cd-Te and Cd-Zn-Te based cameras

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Embodiment Construction

[0031] Referring now to the drawings, the details of preferred embodiments of the present invention are graphically and schematically illustrated. Like elements in the drawings are represented by like numbers, and any similar elements are represented by like numbers with a different lower case letter suffix.

[0032] As illustrated in FIG. 1, the present invention is a high energy, real-time capable, direct radiation conversion X-ray imaging system 10. More specifically, the present invention relates to such X-ray imaging systems 10 utilizing a Cd—Te or Cd——Zn—Te based camera. The present real-time capable X-ray imaging system 10, like imaging systems generally, comprises a camera module, an image processor 14, and a display means 16. In the present real-time X-ray imaging system 10, the camera module 12 includes an X-ray imaging device 28 having a Cd—Te or Cd——Zn—Te based radiation detector substrate 30 in electrical communication with an Application Specific Integrated Circuit (ASIC...

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Abstract

A calibrated real-time, high energy X-ray imaging system is disclosed which incorporates a direct radiation conversion, X-ray imaging camera and a high speed image processing module. The high energy imaging camera utilizes a Cd—Te or a Cd—Zn—Te direct conversion detector substrate. The image processor includes a software driven calibration module that uses an algorithm to analyze time dependent raw digital pixel data to provide a time related series of correction factors for each pixel in an image frame. Additionally, the image processor includes a high speed image frame processing module capable of generating image frames at frame readout rates of greater than ten frames per second to over 100 frames per second. The image processor can provide normalized image frames in real-time or can accumulate static frame data for substantially very long periods of time without the typical concomitant degradation of the signal-to-noise ratio.

Description

FIELD OF THE INVENTION [0001] The present invention is in the field of semiconductor imaging systems for imaging x-ray and gamma ray radiant energy. More specifically, the invention relates to a high energy charge-integrating imaging devices utilizing Cd—Te or Cd—Zn—Te based detector substrates in combination with CMOS readout substrates. Additionally, the invention relates to a process for calibrating such high energy radiation imaging systems. BACKGROUND OF THE INVENTION [0002] Over the past ten years digital radiation imaging has gradually been replacing conventional radiation imaging for certain applications. In conventional radiation imaging applications, the detecting or recording means is a photosensitive film or an analog device such as an Image Intensifier. Digital radiation imaging is performed by converting radiation impinging on the imaging device (or camera) to an electronic signal and subsequently digitizing the electronic signal to produce a digital image. [0003] Digi...

Claims

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Application Information

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IPC IPC(8): G01T1/24
CPCH01L27/14634H01L31/0296H04N5/325G01T1/24H04N5/3655H04N5/367H04N5/3651H04N25/673H04N25/671H04N25/68
Inventor SPARTIOTIS, KONSTANTINOSPANTSAR, TUOMAS
Owner OY AJAT LTD
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