High energy, real time capable, direct radiation conversion X-ray imaging system for Cd-Te and Cd-Zn-Te based cameras
Patent Information
- Authority / Receiving Office
- US ¡ United States
- Current Assignee / Owner
- OY AJAT LTD
- Publication Date
- 2006-01-19
- Estimated Expiration
- Not applicable ¡ inactive patent
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Abstract
Description
FIELD OF THE INVENTION
[0001] The present invention is in the field of semiconductor imaging systems for imaging x-ray and gamma ray radiant energy. More specifically, the invention relates to a high energy charge-integrating imaging devices utilizing CdâTe or CdâZnâTe based detector substrates in combination with CMOS readout substrates. Additionally, the invention relates to a process for calibrating such high energy radiation imaging systems. BACKGROUND OF THE INVENTION
[0002] Over the past ten years digital radiation imaging has gradually been replacing conventional radiation imaging for certain applications. In conventional radiation imaging applications, the detecting or recording means is a photosensitive film or an analog device such as an Image Intensifier. Digital radiation imaging is performed by converting radiation impinging on the imaging device (or camera) to an electronic signal and subsequently digitizing the electronic signal to produce a digital image.
[0003] Digi...