Methods and apparatus for monitoring a process in a plasma processing system by measuring impedance

Abstract

A method for in-situ monitoring a process in a plasma processing system having a plasma processing chamber is disclosed. The method includes positioning a substrate in the plasma processing chamber. The method also includes striking a plasma within the plasma processing chamber while the substrate is disposed within the plasma processing chamber. The method further includes obtaining a measured impedance that exists after the plasma is struck, the measured impedance value having a first value when the plasma is absent and at least a second value different from the first value when the plasma is present. The method also includes correlating the measured impedance value with an attribute of the process, if the measured impedance value is outside of a predefined impedance value envelope.

Description

BACKGROUND OF THE INVENTION [0001] The present invention relates in general to substrate manufacturing technologies and in particular to methods and apparatus for monitoring a process in a plasma processing system by measuring impedance. [0002] In the processing of a substrate, e.g., a semiconductor substrate or a glass panel such as one used in flat panel display manufacturing, plasma is often employed. As part of the processing of a substrate for example, the substrate is divided into a plurality of dies, or rectangular areas, each of which will become an integrated circuit. The substrate is then processed in a series of steps in which materials are selectively removed (etching) and deposited (deposition) in order to form electrical components thereon. [0003] In an exemplary plasma process, a substrate is coated with a thin film of hardened emulsion (i.e., such as a photoresist mask) prior to etching. Areas of the hardened emulsion are then selectively removed, causing components ...

AI Technical Summary

Benefits of technology

The invention is about a method and apparatus for monitoring a process in a plasma processing system. The method involves positioning a substrate in the plasma processing chamber and striking a plasma while the substrate is inside. The resulting measured impedance is then correlated with an attribute of the process to analyze its impact on the process. The technical effect of this invention is to provide a non-invasive and efficient way to monitor the plasma processing process in real-time, which can help to improve the quality and efficiency of the plasma processing process.

Problems solved by technology

That is, increasing helium pressure subsequently also increases the heat transfer rate.

However, in these and other plasma processes, it is often difficult to determine exactly when process conditions change beyond established parameters.

Contamination, in particular, tends to present a substantial problem.

Since fully removing deposits may be time consuming, a plasma processing system chamber is generally only substantially cleaned when the particle contamination levels reach unacceptable levels, when the plasma processing system must be opened to replace a consumable structure (e.g., edge ring, etc.), or as part of scheduled preventive maintenance (PM).

Likewise, hardware deterioration also tends to be problematic.

As plasma chamber components are exposed to the plasma, they themselves may become damaged, altering mechanical and electrical characteristics, as well as producing contaminants.

In fact, the cleaning process itself may damage the components, as with the electrostatic chuck (chuck) during waferless auto clean or (WAC).

Yet, there is generally no effective way to determine if a plasma process has moved outside of established parameters in-situ, without first initially processing and then subsequently testing partially manufacturing substrates.

If the test determines that the substrate does not meet the established specification, the entire batch of substrates may need to be destroyed.

However, creating an empirical model may be problematic.

However, even a loosely correlated (and hence weakly predictive) model is difficult to obtain since repetition of the plasma process itself may effect of the electrical characteristics of plasma processing system components.

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