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Semiconductor Device and method of manufacturing the same

a technology of semiconductors and semiconductors, applied in the direction of semiconductor devices, basic electric elements, electrical equipment, etc., can solve the problems of poor manufacturing yield and difficulty in and achieve the effect of shortening the manufacturing process and

Active Publication Date: 2006-10-19
ROHM CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The present invention provides a semiconductor device and a method of manufacturing the same that can shorten manufacturing processes and prevent the adverse effects of heat treatment on operating characteristics. The semiconductor device includes a silicon carbide semiconductor substrate and an ohmic metal layer joined to one surface of the substrate in an ohmic contact. The ohmic metal layer is made of a metal material with negative values for silicate formation free energy and carbide formation free energy. The method of manufacturing the semiconductor device involves heating the substrate and metal layer to a low temperature and forming a good ohmic junction. The semiconductor device can be connected to an external substrate with good adhesion. The carrier concentration of a semiconductor layer on the substrate can be higher on one surface than the other surface, and a Schottky metal layer can be added to the other surface for a Schottky barrier diode.

Problems solved by technology

Therefore, the heat treatment must be carried out at least twice, thereby making it difficult to shorten the manufacturing processes.
Therefore, the operating characteristics of the Schottky barrier diode may be adversely affected by the heat treatment during the manufacturing processes, resulting in poor manufacturing yields.

Method used

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  • Semiconductor Device and method of manufacturing the same
  • Semiconductor Device and method of manufacturing the same
  • Semiconductor Device and method of manufacturing the same

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Embodiment Construction

[0057]FIG. 1 is a cross-sectional view schematically showing the configuration of a semiconductor device according to an embodiment of the present invention. The semiconductor device is a Schottky barrier diode, for example. An example of a semiconductor substrate is an N-type SiC semiconductor substrate (e.g., a 4H-SiC epiwafer) 1 having a surface orientation of {0001} and having an off angle of 8°. An edge termination 15 is formed, in the SiC semiconductor substrate 1, by boron implantation and annealing at a relatively low temperature (approximately 1000° C.).

[0058] One surface of the SiC semiconductor substrate 1 is a silicon surface 11, and the other surface thereof is a carbon surface 12.

[0059] An N-type SiC semiconductor epitaxial layer 10 having a thickness of approximately 10 μm and having a carrier concentration of 4.0×1015 / cm3 to 8.0×1015 / cm3 is formed on the silicon surface 11. Consequently, the carrier concentration in the SiC semiconductor substrate 1 on the side of ...

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Abstract

A semiconductor device provided with a silicon carbide semiconductor substrate, and an ohmic metal layer joined to one surface of the silicon carbide semiconductor substrate in an ohmic contact and composed of a metal material whose silicate formation free energy and carbide formation free energy respectively take negative values. The ohmic metal layer is composed of, for example, a metal material such a s molybdenum, titanium, chromium, manganese, zirconium, tantalum, or tungsten.

Description

BACKGROUND OF THE INVENTION [0001] 1. Field of the Invention [0002] The present invention relates to a semiconductor device such as a Schottky barrier diode using a silicon carbide semiconductor substrate and a method of manufacturing the same. [0003] 2. Description of Related Art [0004] The configuration of a Schottky barrier diode using a silicon carbide (SiC) semiconductor substrate is as shown in FIG. 9(e). One surface of a SiC semiconductor substrate 100 is a silicon surface 110, and the other surface thereof is a carbon surface 120. A SiC epitaxial layer 101 is formed on the side of the silicon surface 110. [0005] A titanium (Ti) metal layer 30, for example, is formed on the silicon surface 110, and a Schottky junction is formed in an interface between the silicon surface 110 and the Ti metal layer 30. Further, an Al surface electrode 50, for example, is formed on a surface of the Ti metal layer 30 in order to ensure good adhesion to a metal wire composed of aluminum (Al) or t...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): H01L21/4763H01L21/04H01L29/24
CPCH01L29/1608H01L29/45H01L29/66143H01L29/6606H01L29/872H01L29/47H01L2224/05624H01L2224/05644H01L2224/05639H01L2224/05166H01L2224/0518H01L2224/45124H01L2224/73265H01L2224/32245H01L2924/10272H01L2224/04026H01L29/0615
Inventor OKAMURA, YUJIMATSUSHITA, MASASHI
Owner ROHM CO LTD
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