Semiconductor device with effective heat-radiation
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embodiment 1
Preferred Embodiment 1
[0032]FIG. 1 is a drawing illustrating a composition of a SOI device which is a semiconductor device according to the preferred embodiment 1. The SOI device has a SOI structure that a silicon layer (SOI layer) 12 is formed on a support substrate 10 made of silicon through a silicon oxide film 11 which is a first insulating film. A transistor T1 is formed in the SOI layer 12. A silicon oxide film 13 to insulate and separate a semiconductor element with the other one formed in the SOI layer 12 is formed in the SOI layer 12. A silicon oxide film 14 which is a second insulating film is formed on the SOI layer 12, and wirings 17a and 17b made of Aluminum (Al) are formed on the silicon oxide film 14. The wiring 17a which is a first wiring is connected with a source of the transistor T1 through a contact plug 15a which is a first plug made of Tungsten (W). The wiring 17b is connected with a drain of the transistor T1 through a contact plug 15b made of Tungsten. In the...
embodiment 2
Preferred Embodiment 2
[0050] As illustrated in FIG. 11 described in the preferred embodiment 1, the manufacturing method is simplified and the high heat-radiating effect can be obtained by removing the entire support substrate 10. However, in case that the SOI device has a circuit region having elements such as a transistor, an inductor, a resistance, a varactor and so on, it is considered that a signal loss in the elements of the circuit region becomes large (that is to say, a Q factor drops) caused by an electrostatic induction, if the support substrate 10 on a bottom of the circuit region is removed and the back metal 18 is formed directly on the under surface of the silicon oxide film 11.
[0051]FIG. 12 is a drawing illustrating a composition of a SOI device which is a identical with that in FIG. 1 are put on elements similar to that in FIG. 1, thus a detailed description is omitted here. The SOI device has a circuit region in which elements such as a resistance element R1, an in...
embodiment 3
Preferred Embodiment 3
[0053]FIG. 13 is a drawing illustrating a composition of a SOI device which is a semiconductor device according to the preferred embodiment 3. In this drawing, signals identical with that in FIG. 1 are put on elements similar to that in FIG. 1. As illustrated in FIG. 13, the SOI device includes a cooling element 40 instead of the back metal 18 in the SOI device according to the preferred embodiment 1 or the preferred embodiment 2. It can also include the support substrate 10 in a predetermined position (for example, a bottom of the elements such as the transistor, the inductor, the resistance, the varactor and so on), although an illustration in FIG. 13 is omitted.
[0054] A Peltier cooling element is noticed as the cooling element 40. For example, when an electric current flows with connecting a copper 41 with a constantan 42 as illustrated in FIG. 14, an absorption of a heat occurs at its junction. The Peltier cooling element is that this effect is employed fo...
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