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Pixel structure for transflective LCD panel and fabricating method thereof

Inactive Publication Date: 2007-03-15
AU OPTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0008] Therefore, an object of the invention is to provide a pixel structure for a transflective TFT LCD panel, adapted for improving efficiency in backlights utilization of the TFT LCD.
[0009] Another object of the invention is to provide a method for fabricating a transflective TFT LCD panel having higher efficiency in backlights utilization.
[0023] When forming a TFT, a reflective structure is simultaneously formed on at least one side of the TFT. There is no extra processing needed to form the reflective structure. Further, this reflective structure is adapted for improving efficiency in backlights utilization of the TFT LCD.

Problems solved by technology

However, CRT displays have obvious disadvantages such as large size, heavy weight, high radiation and poor pixel quality, and therefore various flat display panels are explored and introduced.
However, the process to make the surfaces rough increases production costs.
Therefore, such a conventional transflective TFT LCD has lower utilization efficiency of lights provided by the backlight module.

Method used

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  • Pixel structure for transflective LCD panel and fabricating method thereof
  • Pixel structure for transflective LCD panel and fabricating method thereof
  • Pixel structure for transflective LCD panel and fabricating method thereof

Examples

Experimental program
Comparison scheme
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first embodiment

The First Embodiment

[0032]FIGS. 1A through 1E schematically illustrate a flow chart of fabricating a pixel structure for a transflective LCD panel, according to the first embodiment of the invention. First, the step shown in FIG. 1A, includes providing a transparent substrate 100, and simultaneously forming a gate electrode 110 and a metallic layer 122 on the transparent substrate 100, wherein the metallic layer 122 is formed at one side of the gate electrode 110 for configuring a reflective structure 120. According to the first embodiment, the reflective structure 120 for example can be either sawtooth-shaped or block-shaped. Further, the transparent substrate 100 for example is a glass substrate. The reflective structure 120 and the gate electrode 110 are made of a same material.

[0033] Then, the following step shown in FIG. 1B includes forming a gate insulating layer 130 over the transparent substrate 100 in a chemical vapor deposition (CVD) method, for example, wherein the gate ...

second embodiment

The Second Embodiment

[0039]FIGS. 2A through 2E schematically illustrate a flow chart of fabricating a pixel structure for a transflective LCD panel, according to the second embodiment of the invention. First, the step shown in FIG. 2A includes providing a transparent substrate 200, conducting a lithographic process and an etching process to form a depression 202 at the surface of the transparent substrate 200. The transparent substrate 200 for example is a glass substrate, and the etching liquid used for etching the transparent substrate 200 for example is a hydrogen fluoride solution.

[0040] Then, the following step shown in FIG. 2B includes forming a gate electrode 210, and at the same time forming a metallic layer 222 at one side of the gate electrode 210, wherein the metallic layer 222 is lodged into the depression 202 for configuring a reflective structure 220. It is to be noted that the reflective structure 220 and the gate electrode 210 are made of a same material.

[0041] The...

third embodiment

The Third Embodiment

[0045]FIGS. 3A through 3D schematically illustrate a flow chart of fabricating a pixel structure for a transflective LCD panel, according to the third embodiment of the invention. First, the step shown in FIG. 3A includes providing a transparent substrate 300, and forming gate electrode 310 on the transparent substrate 300.

[0046] Then, the following step shown in FIG. 3B includes: forming a gate insulating layer 330 over the transparent substrate 300 by a CVD method, for example, wherein the gate insulating layer 330 covers the gate electrode 310; and forming a semiconductor layer 340 above the gate insulating layer 330. The gate insulating layer 330 for example is made of silicon dioxide, silicon nitride or silicon oxynitride. The method for forming the semiconductor layer 340 includes: forming an amorphous silicon layer 342; then forming an ohmic contact layer 344 on the amorphous silicon layer 342, wherein the ohmic contact layer 344 for example is made of N+...

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Abstract

A pixel structure for a transflective LCD having a transparent region and a reflective region is provided. The pixel structure includes a transparent substrate, a TFT, at least one reflective structure, a passivation layer, a pixel electrode and a reflective layer. The TFT is disposed in a reflective region of the transparent substrate. The reflective structure is configured at one side of the TFT, and located in the reflective region of the transparent substrate. The passivation layer is disposed over the transparent substrate and covers the TFT and the reflective structure. The pixel electrode is disposed above the TFT and the reflective structure, and is at least located in a transparent region. The pixel electrode is electrically connected to the TFT. The reflective layer is disposed above the TFT and the reflective structure, and is located in the reflective region.

Description

CROSS-REFERENCE TO RELATED APPLICATION [0001] This application claims the priority benefit of Taiwan application serial no. 94131048, filed on Sep. 9, 2005. All disclosure of the Taiwan application is incorporated herein by reference. BACKGROUND OF THE INVENTION [0002] 1. Field of the Invention [0003] The present invention relates to a pixel structure and a fabricating method thereof, and particularly to a pixel structure for a transflective thin film transistor (TFT) liquid crystal display (LCD) for improving efficiency in backlight utilization and a fabricating method thereof. [0004] 2. Description of Related Art [0005] Since the first cathode ray tube (CRT) television was invented, display technology has developed rapidly. However, CRT displays have obvious disadvantages such as large size, heavy weight, high radiation and poor pixel quality, and therefore various flat display panels are explored and introduced. Among them, LCDs, with advantages such as compact size, power consum...

Claims

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Application Information

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IPC IPC(8): G02F1/1335
CPCG02F1/136227G02F1/133555
Inventor CHIEN, LIANG-NENG
Owner AU OPTRONICS CORP
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