Semiconductor device, an electronic device and an electronic apparatus

Inactive Publication Date: 2007-08-09
SEIKO EPSON CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0015] This makes it possible to prevent SBD or SILC from occurring even in the case of thinning the insulating film and to have high resistance to a dielectric breakdown such as SILC, TZDB, or TDDB (that is, it is possible to improve insulating properties to SILC, TZDB, or TDDB).
[0041] This makes it possible to obtain an electronic apparatus having high reliability.

Problems solved by technology

In a Metal Oxide Semiconductor Field Effect Transistor (MOSFET), for example, the thickness of a gate insulating film (gate insulator) tends to become further thinner, and therefore it is difficult to ensure resistance to a dielectric breakdown of the insulating film.
The TZDB is an initial failure of the gate insulating film, and means a dielectric breakdown in which a large leakage current flows in the insulating film at the moment of applying an electric stress such as a voltage stress, a current stress or the like.
Therefore, a MOSFET in which a SBD occurs may function as a semiconductor device (semiconductor element) although an insulating property thereof becomes unstable.
Further, there is a possibility that the SBD shifts to the HBD as time goes by.
In these deterioration modes of the insulating film, the SBD and SILC particularly become problems in thinning a gate insulating film.
In the case where the thickness of the gate insulating film (gate oxidized film) is 10 nm or less, the deterioration frequently occurs in the low electric field intensity range of 10 MV / cm or less (that is, in the low voltage range in which the electric field intensity is in the range of 10 MV / cm or less), and this becomes major cause that prevent a gate insulating film from being thinned.
However, the above-mentioned patent application focuses on prevention of occurrence of the SILC, and as a result, the occurrence of the SBD is not examined and discussed in this application.
However, this patent application only defines the total amount of hydrogen atoms.

Method used

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  • Semiconductor device, an electronic device and an electronic apparatus
  • Semiconductor device, an electronic device and an electronic apparatus
  • Semiconductor device, an electronic device and an electronic apparatus

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0166] -1A- A surface direction (100) p-type silicon crystal substrate (Si(100) substrate, that is, a base) was first prepared. The silicon crystal substrate was subject to a thermal oxidation process, and then a silicon oxynitride film (foundation layer) was formed with a CVD method. The thermal oxidation process was carried out for fifteen minutes in the atmosphere of water vapor (H2O) having relative humidity of 33% RH at 750° C. The average thickness Y of the obtained silicon oxide film was 5.5 nm.

[0167] -2A- Next, this silicon oxide film was subject to heat treatment that was carried out for 10 minutes in the atmosphere of ammonia (NH3) at 850° C. By carrying out the steps as described above, an insulating film was obtained.

example 2

[0168] By carrying out the steps as well as Example 1 described above except that the conditions of the heat treatment in the atmosphere of ammonia (NH3) in the step -2A- described above were changed from 850° C.×10 minutes to 750° C.×10 minutes, an insulating film having an average thickness Y of 5.3 nm was obtained.

example 3

[0169] By carrying out the steps as well as Example 1 described above except that the conditions of the heat treatment in the atmosphere of ammonia (NH3) in the step -2A- described above were changed from 850° C.×10 minutes to 900° C.×15 minutes, an insulating film having an average thickness Y of 5.5 nm was obtained.

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Abstract

A semiconductor device 1 includes: a base 2 mainly formed of a semiconductor material; a gate electrode 5; and a gate insulating film 3 provided between the base 2 and the gate electrode 5. The gate insulating film 3 is formed of an insulative inorganic material containing silicon, oxygen and element X other than silicon and oxygen as a main material. The gate insulating film 3 is provided in contact with the base 2, and contains hydrogen atoms. The gate insulating film 3 has a region where A and B satisfy the relation: B / A is 10 or less in the case where the total concentration of the element X in the region is defined as A and the total concentration of hydrogen in the region is defined as B. Further, the region is at least a part of the gate insulating film 3 in the thickness direction thereof.

Description

TECHNICAL FIELD [0001] The present invention relates to a semiconductor device, an electronic device and an electronic apparatus. BACKGROUND ART [0002] Recently, in devices including semiconductor integrated circuits, in order to improve high integration thereof, the size of each element tends to become miniaturization increasingly. In a Metal Oxide Semiconductor Field Effect Transistor (MOSFET), for example, the thickness of a gate insulating film (gate insulator) tends to become further thinner, and therefore it is difficult to ensure resistance to a dielectric breakdown of the insulating film. [0003] The dielectric breakdown of a gate insulating film includes a Time Zero Dielectric Breakdown (TZDB) and a time-dependent dielectric breakdown (TDDB). The TZDB is an initial failure of the gate insulating film, and means a dielectric breakdown in which a large leakage current flows in the insulating film at the moment of applying an electric stress such as a voltage stress, a current ...

Claims

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Application Information

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IPC IPC(8): H01L29/94G02F1/136H01L21/28H01L21/30H01L21/316H01L29/51H01L29/78
CPCH01L21/02142H01L21/02164H01L21/28194H01L21/28202H01L29/518H01L21/3003H01L21/3105H01L29/517H01L21/28211
InventorMIYATA, MASAYASU
OwnerSEIKO EPSON CORP