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Method for obtaining high-quality boundary for semiconductor devices fabricated on a partitioned substrate

Inactive Publication Date: 2008-10-23
LATTICE POWER (JIANGXI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0011]One embodiment of the present invention provides a process for obtaining high-quality boundaries for individual multilayer structures which are fabricated on a trench-partitioned substrate. During operation, the process receives a trench-partitioned substrate wherein the substrate surface is partitioned in

Problems solved by technology

GaN-based single-crystal substrates however are not commercially available in large quantities.
The heterogeneity between the substrate and the semiconductor devices causes inevitable lattice-constant and thermal-expansion coefficient mismatches.
As a result, qualities of these nitride-based semiconductor devices, such as light emitting efficiency and reliability, can be significantly impacted by such mismatches.
In particular, the above mismatches can result in high density of dislocations and large in-plane stresses in the epitaxial layers, which can subsequently lead to device quality deterioration and high probability of cracking of the multilayer structures.
However, these techniques still exhibit deficiencies in eliminating stresses caused by the above mismatches, and cracking in the epitaxial semiconductor layers continues to be a serious problem during fabrication.
A problem arises from growing semiconductor multilayer structures on these individual deposition platforms.
Each platform corresponds to a relatively confined area for film growth, and the boundaries of each platform can have deleterious effect on the multilayer structure near the boundary.

Method used

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  • Method for obtaining high-quality boundary for semiconductor devices fabricated on a partitioned substrate
  • Method for obtaining high-quality boundary for semiconductor devices fabricated on a partitioned substrate
  • Method for obtaining high-quality boundary for semiconductor devices fabricated on a partitioned substrate

Examples

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example 1

[0055]A conventional substrate is patterned and etched to form square individual deposition platforms. Each square deposition platform has a size of 285 μm×285 μm. The trench structure that partitioned the substrate has a trench width of 15 μm and depth of 20 μm.

[0056]Next, on each square deposition platform, a GaN blue LED multilayer structure is formed by epitaxial growth using an metal oxide chemical vapor deposition (MOCVD) method, wherein the total thickness of the multilayer structure is 4 μm. An oxide mask layer is then deposited and a 2 μm thick PR layer is then spin-coated over the mask layer, wherein the PR layer is photolithographed to retain the 250 μm×250 μm central region. The oxide layer is then etched through a photo lithography process to expose 35 μm wide boundaries on each side of the multilayer structure.

[0057]The substrate then under goes an ICP dry etching process. The dry etching process removes the exposed low-quality edges and sidewalls of the multilayer str...

example 2

[0058]A conventional substrate is patterned and etched to form diamond-shape individual deposition platforms. Each diamond-shaped deposition platform has a side of 285 μm and an acute angle of 60°. The trench structure that partitioned the substrate has a trench width of 15 μm and depth of 30 μm.

[0059]Next, on each diamond-shaped deposition platform, a GaN blue LED multilayer structure is formed by epitaxial growth using an MOCVD method, wherein the total thickness of the multilayer structure is 4 μm. A 6 μm thick PR layer is then spin-coated over the multilayer structure, wherein the PR layer is photo lithographed to retain a 250 μm-side diamond shape, which subsequently exposes approximately 35 μm wide boundaries on each side of the multilayer structure.

[0060]The substrate is then placed in an ICP machine, and is dry-etched until the active layer of the LED multilayer structure is etched through. The dry etch process removes the exposed low-quality edges and sidewalls of the multi...

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Abstract

One embodiment of the present invention provides a process for obtaining high-quality boundaries for individual multilayer structures which are fabricated on a trench-partitioned substrate. During operation, the process receives a trench-partitioned substrate wherein the substrate surface is partitioned into arrays of isolated deposition platforms which are separated by arrays of trenches. The process then forms a multilayer structure, which comprises a first doped layer, an active layer, and a second doped layer, on one of the deposition platforms. Next, the process removes sidewalls of the multilayer structure.

Description

BACKGROUND[0001]1. Field of the Invention[0002]The present invention relates to techniques for semiconductor device manufacturing. More specifically, the present invention relates to a method for improving device qualities by etching sidewalls of semiconductor devices formed on isolated mesas of a partitioned substrate.[0003]2. Related Art[0004]Solid-state light-emitting devices are expected to lead the next wave of illumination technologies. High-brightness light-emitting diodes (HB-LEDs) are emerging in an increasing number of applications, from light source for display devices to light-bulb replacement for conventional lighting. Meanwhile, solid-state lasers continue to beam as the driving force in many critical technological fields, from optical data storage, to optical communication networks, and to medical applications.[0005]In recent years, an increasing demand has emerged for short wavelength light-emitting devices, such as blue and UV LEDs and diode lasers. These short wave...

Claims

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Application Information

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IPC IPC(8): H01L21/306H01L29/06H01L33/00
CPCH01L33/007H01S5/32341H01S5/327
Inventor WANG, LIJIANG, FENGYI
Owner LATTICE POWER (JIANGXI) CORP