Method of Forming Phase Change Memory Cell With Reduced Switchable Volume

Abstract

A memory cell is fabricated by forming a dielectric layer and patterning a hole in the dielectric layer. Patterning the hole is accomplished at least in part by contacting the dielectric layer with a catalytic material in the presence of a reactant under conditions effective to remove those areas of the dielectric layer in contact with the catalytic material. A phase change feature is then formed in contact with the dielectric layer such that a portion of the phase change feature at least partially fills the hole in the dielectric layer. At least a portion of the patterned dielectric layer remains in the ultimate memory cell.

Description

FIELD OF THE INVENTION [0001]This invention relates generally to memory cells in integrated circuits, and, more particularly, to memory cells comprising phase change materials for use in integrated circuits.BACKGROUND OF THE INVENTION [0002]The possibility of using phase change materials (PCMs) in nonvolatile memory cells has recently gained momentum as more is learned about these materials and their integration into integrated circuits. When incorporated in a memory cell, these materials can be toggled between higher and lower electrical resistance states by applying a pulse of electrical current (“switching current pulse”) to the memory cell. After writing to a memory cell in this way, the electrical resistance state of the given memory cell can be determined (i.e., read) by applying a low magnitude sensing voltage to the material in order to determine its electrical resistance.[0003]Currently, binary and ternary chalcogenide alloys such as doped antimony telluride (SbTe) and germ...

AI Technical Summary

Benefits of technology

[0008]Advantageously, the magnitude of the switching current pulse required to cause the PCM occupying the hole in the dielectric layer to make an electrical resistance state transition is substantially less than that which would be required to cause a transition in the remainder of the PCM volume. This memory cell design, therefore, utilizes high localized switching current density to reduce the required magnitude of the switching current pulse.

Problems solved by technology

However, the switching of a PCM-based memory cell requires that the switching current pulse produce enough heat in the PCM to cause at least some portion of the PCM to reproducibly change electrical resistance state.

If the memory cell is not properly designed, the magnitude of the switching current pulse necessary to create these required temperatures can easily exceed that which can be tolerated by modern integrated circuits.

The confinement of the switching current to this narrow region results in high localized current density, and, in turn, in high localized ohmic heating.

Nevertheless, it remains challenging to reliably and reproducibly form constricted regions of PCM with suitably narrow dimensions.

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