Copper Alloy Sputtering Target and Semiconductor Element Wiring

Abstract

A first copper alloy sputtering target comprising 0.5 to 4.0 wt % of Al and 0.5 wtppm or less of Si and a second copper alloy sputtering target comprising 0.5 to 4.0 wt % of Sn and 0.5 wtppm or less of Mn are disclosed. The first and / or the second alloy sputtering target can further comprise one or more elements selected from among Sb, Zr, Ti, Cr, Ag, Au, Cd, In and As in a total amount of 1.0 wtppm or less. A semiconductor element wiring formed by the use of the above targets is also disclosed. The above copper alloy sputtering target allows the formation of a wiring material for a semiconductor element, in particular, a seed layer being stable, uniform and free from the occurrence of coagulation during electrolytic copper plating and exhibits excellent sputtering film formation characteristics.

Description

CROSS REFERENCE TO RELATED APPLICATIONS[0001]This application is a divisional of co-pending U.S. application Ser. No. 10 / 530,438, which is the National Stage of International Application No. PCT / JP03 / 13251, filed Oct. 16, 2003, which claims the benefit under 35 USC §119 of Japanese Application No. 2002-337341, filed Nov. 21, 2002.BACKGROUND OF THE INVENTION[0002]The present invention pertains to a copper alloy sputtering target for a wiring material of a semiconductor element, in particular a copper alloy sputtering target which allows the formation of a seed layer being stable, uniform and free from the occurrence of coagulation during copper electroplating and which exhibits excellent sputtering film formation characteristics, and a semiconductor element wiring formed with such a target.[0003]Conventionally, Al (specific resistance of roughly 3.1 μΩ·cm) has been used as the wiring material of a semiconductor element, but copper wiring with lower resistance (specific resistance of ...

AI Technical Summary

Benefits of technology

The target effectively prevents coagulation, ensures uniform seed layer formation, and improves electromigration and oxidation resistance, resulting in superior sputtering film characteristics and stable semiconductor element wiring.

Problems solved by technology

Nevertheless, there were problems in that with ultra fine wiring where the copper wiring width is 0.13 μm or less; for instance, 90 nm or 65 nm, and the aspect ratio exceeds 8, the thickness of the seed layer would become an ultra thin film of 100 nm or less, and, when forming a seed layer with a 6N purity copper target, coagulation would occur and a favorable seed layer could not be formed.

As described above, the uniformity of the foundation layer is important, and, when the foundation layer becomes coagulated, it is not possible to form a uniform film upon forming a copper film via electroplating.

For example, during wiring, defects such as voids, hillocks, and disconnections are formed.

Even if defects such as voids described above are not formed, since an uneven electrodeposited texture of copper will be formed in this portion, there is a problem in that the electromigration resistance will deteriorate.

Nevertheless, although high purity copper or copper alloy which add minute amounts of metal to the high purity copper have an advantage in that the specific resistance is low, these cannot necessarily be considered favorable materials since there is the problem of electromigration and the problem of oxidation resistance during the process.

Nevertheless, this is for improving the EM resistance, SM resistance or oxidation resistance without hindering the low resistance characteristics of copper, and could not be used for forming a seed layer in an ultra fine copper wiring process pursuant to the copper electroplating described above (for example, c.f.

Nevertheless, this does not resolve the coagulation problem (interaction) with the seed layer on the barrier layer formed with the likes of Ta or TaN.

Accordingly, with conventional technology, a wiring material for a semiconductor element, in particular, a copper alloy which allows the formation of a seed layer being stable, uniform and free from the occurrence of coagulation during copper electroplating has not been obtained, and conventionally technology was not necessarily sufficient.