Mounting stage and plasma processing apparatus

Abstract

A mounting stage for a plasma processing apparatus that can prevent degradation of an insulating film in a semiconductor device on a substrate. A conductor member is connected to a radio-frequency power source for producing plasma. A dielectric layer is buried in a central portion of an upper surface of the conductor member. An electrostatic chuck is mounted on the dielectric layer. The electrostatic chuck has an electrode film that satisfies the following condition:δ / z≧85where δ=(ρv / (μπf))1 / 2 where z is the thickness of the electrode film, δ is the skin depth of the electrode film with respect to radio-frequency electrical power supplied from the radio-frequency power source, f is the frequency of the radio-frequency electrical power, π is the ratio of a circumference of a circle to its diameter, μ is the magnetic permeability of the electrode film, and ρv is the specific resistance of the electrode film.

Description

BACKGROUND OF THE INVENTION[0001]1. Field of the Invention[0002]The present invention relates to a mounting stage on which a substrate subjected to plasma processing is mounted, and a plasma processing apparatus having the mounting stage, and in particular to a mounting stage in which a dielectric layer is buried.[0003]2. Description of the Related Art[0004]In a process of manufacturing a semiconductor device, a semiconductor wafer (hereinafter referred to merely as a “wafer”) is subjected to plasma processing such as dry etching or ashing using plasma produced from a process gas. In a plasma processing apparatus that carries out the plasma processing, for example, a pair of upper and lower parallel plate electrodes are disposed in a manner opposed to each other, and radio-frequency electrical power is applied between the opposing electrodes, whereby plasma is produced from a process gas. When the plasma processing is to be carried out, a wafer is mounted on the lower electrode as a...

AI Technical Summary

Benefits of technology

[0013]The present invention provides a mounting stage and a plasma processing apparatus that can prevent degradation of an insulating film in a semiconductor device on a substrate.

[0014]The present invention also provides a mounting stage and a plasma processing apparatus that can manage the resistance value of an included electrode film.

Problems solved by technology

For this reason, the etching speed varies according to the position of a wafer in the case of, for example, dry etching using ions, and it is thus difficult to ensure the over-surface uniformity in the dry etching.

For example, there has been the problem that if the resistance value of the electrode film 145 is extremely high, excessive radio-frequency electric current flows to the wafer W, and at this time, a gate oxide film in a semiconductor device on the wafer W degrades due to charge-up.

In general, however, because the electrode film 145 of the electrostatic chuck 144 is sintered while being supported from both sides thereof between the lower member and the upper member, there has been the problem that in a process of manufacturing the electrostatic chuck 144 and after the electrostatic chuck 144 is manufactured, the resistance value of the electrode film 145 cannot be measured, and thus the resistance value of the electrode film 145 cannot be managed.

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