Selenium containing electrodeposition solution and methods

Abstract

The present inventions relate to selenium containing electrodeposition solutions used to manufacture solar cell absorber layers. In one aspect is described an electrodeposition solution to electrodeposit a Group IB-Group VIA thin film that includes a a solvent; a Group IB material source; a Group VIA material source; and at least one complexing that forms a complex ion of the Group IB material. Also described are methods of electroplating using electrodeposition solutions.

Description

CROSS REFERENCE TO RELATED APPLICATIONS[0001]This application is a Continuation in Part of U.S. patent application Ser. No. 12 / 121,687 FILED May 15, 2008 entitled “SELENIUM ELECTROPLATING CHEMISTRIES AND METHODS” (SP-049), and this application is a Continuation in Part of U.S. patent application Ser. No. 12 / 371,546 filed Feb. 13, 2009 entitled “ELECTROPLATING METHODS AND CHEMISTRIES FOR DEPOSITION OF COPPER-INDIUM-GALLIUM CONTAINING THIN FILMS” (SP-051), which claims priority to U.S. Provisional Application No. 61 / 150,721, filed Feb. 6, 2009, entitled “ELECTROPLATING METHODS AND CHEMISTRIES FOR DEPOSITION OF COPPER-INDIUM-GALLIUM CONTAINING THIN FILMS” (SP-051P), and this application is a Continuation in Part of U.S. patent application Ser. No. 12 / ______ filed on Dec. 18, 2009 entitled “ENHANCED PLATING CHEMISTRIES AND METHODS FOR PREPARATION OF GROUP IBIIIAVIA THIN FILM SOLAR ABSORBERS” (SP-098) and this application is a Continuation in Part of U.S. patent application Ser. No. 12 / _...

AI Technical Summary

Problems solved by technology

However, the cost of electricity generated using silicon-based solar cells is higher than the cost of electricity generated by the more traditional methods.

However, low materials utilization, high cost of equipment, difficulties faced in large area deposition and relatively low throughput are some of the challenges faced in commercialization of the co-evaporation approach.

(U.S. Pat. No. 2,649,409) disclosed that gray crystalline metallic Se may be electroplated using an acidic electrolyte composed of saturated selenium dioxide in 9 molar H2SO4 at a temperature of 100° C. Since plating of metallic Se requires use of high temperature solutions and highly acidic solution formulations, they are not very suitable for large scale production.

651, 1959) have established that amorphous Se layers with thicknesses up to 500 nm can be plated using acidic (pH 0.7-0.9) or alkaline (pH 7.5-8.0) electrolytes in the temperature range between 20 to 40° C. A common problem associated with electrodeposition of amorphous Se films is that the current plating processes are known to produce colloidal Se which is mostly produced near the cathode surface.

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