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Shielded electronic components and method of manufacturing the same

Inactive Publication Date: 2010-07-08
RENESAS ELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0028]It is supposed that a ratio of metal bonding surface area and a ratio of contact surface area of the shielding metal that is electrically connected with the electrode and the ground wiring connected with a side and / or a surface of the module board are decreased due to deterioration by the temperature cycle test.
[0031]Meanwhile, empirically, a hole in, e.g., a slit-like shape in a shield allows electromagnetic noise to pass through. A slit-like crack generated by deterioration depending on usage environment causes reduction of the shielding effect even when it is short.
[0039]By forming the layer, the anchor effect of the non-electrolytic Ni plating to the resin thereafter can be further stronger. The non-electrolytic Ni plating may be done by a normal method or a non-electrolytic Ni plating method having Ni dissolved in high-pressure CO2 in the same manner with the Pd treatment. The latter method forms a film which forms more diffusion layer because the plating solution itself permeates inside the mold resin.
[0046]Accordingly, a preferred aim of the present invention is to provide an electronic component having a shield with a high reliability in reflow resistance on one side thereof by forming a plating film having no infiltration of CO2 from side surfaces of a board, a high migration reliability, and significantly improved adhesiveness by forming a plating base under high-pressure CO2.
[0051]That is, an advantage obtained by the typical one of the inventions is to manufacture an electronic component having a shield with a high reliability in reflow resistance on one side thereof by forming a plating film having no infiltration of CO2 from side surfaces of a board, a high migration reliability, and significantly improved adhesiveness by forming a plating base under high-pressure CO2.

Problems solved by technology

Also, in a temperature cycle test (e.g., −30° C. / 125° C. in 30 min. cycle) after a reflow test in order to proving reliability, a failure occurs such that the shielding film formed by applying a paste has a deteriorated shielding property as the adhesiveness with the layer connected with the ground is decreased.

Method used

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  • Shielded electronic components and method of manufacturing the same
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  • Shielded electronic components and method of manufacturing the same

Examples

Experimental program
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first embodiment

[0069]With reference to FIG. 1, a structure of a shielded electronic component according to a first embodiment of the present invention will be described. FIG. 1 is a cross-sectional view illustrating the structure of the shielded electronic component according to the first embodiment of the present invention and illustrating a structure of a power amplifier module.

[0070]In FIG. 1, a power amplifier module which is the shielded electronic component includes, when the external structure is viewed, a rectangular wiring board 10, a sealant 23 formed with overlapping on a surface (main surface) of the wiring board 10, a plurality of wirings 11 provided to a back surface of the wiring board 10, and a GND (ground) external wiring 12.

[0071]In addition, the sealant 23 is shielded by a Pd pretreatment layer 117 of a Pd complex and a Ni plating film 118. To edge portions of the wiring board 10, GND connection through-holes 101 for a GND wiring layer (not illustrated) or a shield connected to ...

second embodiment

[0091]A shielded electronic component according to a second embodiment has the semiconductor chip 21 of the first embodiment mounted by face-up mounting.

[0092]With reference to FIG. 10, a structure of a shielded electronic component according to the second embodiment of the present invention will be described. FIG. 10 is a cross-sectional view illustrating a structure of the shielded electronic component according to the second embodiment of the present invention, and illustrates a structure of a power amplifier module.

[0093]In FIG. 10, a wiring 13 is formed to a surface of a wiring board 10 in the power amplifier module, and a chip component 14 is formed to be connected to the wiring 13. The chip component 14 is configured by a passive component such as a resistor or capacitor, and an electrode 14a of the chip component 14 and the wiring 13 formed to the wiring board 10 are electrically connected by a solder 15.

[0094]Also, a wiring 16 is connected to a GND external wiring 12 formed...

third embodiment

[0099]A shielded electronic component according to a third embodiment has the semiconductor chip 21 formed with a plurality of stacked semiconductors and mounted by face-up mounting.

[0100]With reference to FIG. 11, a structure of the shielded electronic component according to the third embodiment of the present invention will be described. FIG. 11 is a cross-sectional view illustrating the structure of the shielded electronic component according to the third embodiment of the present invention, and illustrating a generally used package. The package is a package of only for a memory, and / or a semiconductor package composed of an ASIC and a memory etc., for example.

[0101]In FIG. 11, the semiconductor chip 21 composed of a plurality of stacked semiconductors attached by a die-attach film 233 having its device forming surface facing upwards (face-up) is stacked on a wiring board 10.

[0102]The semiconductor chip 21 and the wiring board 10 are electrically connected to a wiring 13 on a sur...

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Abstract

A shielded electronic component including a wiring board, at least one semiconductor chip mounted on a main surface of the wiring board, a sealant which seals the whole of an upper surface of the wiring board, and a nickel (Ni) plating film formed on an upper surface of the sealant is provided. The Ni plating film is formed on a palladium (Pd) pretreatment layer formed on the upper surface of the sealant with using high-pressure CO2 in a state of protecting a back surface of the wiring board, and is electrically connected with an end portion of a ground wiring layer of the wiring board or a ground (GND) connection through-hole connected with the end portion of the ground wiring layer.

Description

CROSS-REFERENCE TO RELATED APPLICATION[0001]The present application claims priority from Japanese Patent Application No. JP 2008-286254 filed on Nov. 7, 2008, the content of which is hereby incorporated by reference into this application.TECHNICAL FIELD OF THE INVENTION[0002]The present invention relates to a shielded electronic component and a method of manufacturing the same. More particularly, the present invention relates to mounting of electric components including semiconductors such as a semiconductor-mounting electronic component which requires a shielding structure for avoiding adverse effects of ambient radio waves and electromagnetic noise from semiconductors, and a semiconductor mounting electronic component which requires shielding of noise generated from itself.BACKGROUND OF THE INVENTION[0003]A mobile phone will be exemplified to describe a mounting structure of electronic components including semiconductors.[0004]Various electronic components are mounted on a mountin...

Claims

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Application Information

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IPC IPC(8): H05K9/00H05K3/36
CPCH01L21/565H01L21/568H01L23/3121H01L23/3128H01L23/552H01L23/66H01L24/97H01L25/0657H01L25/165H01L25/50H01L2224/16225H01L2224/48091H01L2224/48227H01L2224/73265H01L2224/97H01L2225/0651H01L2924/01027H01L2924/01029H01L2924/01033H01L2924/01046H01L2924/01051H01L2924/01074H01L2924/01078H01L2924/01082H01L2924/14H01L2924/1433H01L2924/19041H01L2924/19105H01L2924/3025H05K1/0218H05K3/0052H05K3/181H05K3/284H05K9/0084H01L24/48H01L2924/01006H01L2924/01045H01L2924/014H01L2224/32145H01L2224/32225H01L2924/15311H01L2224/16235Y10T29/49126H01L2224/81H01L2224/85H01L2924/00014H01L2924/00012H01L2924/00H01L2924/181H01L24/73H01L21/6836H01L2221/68327H01L2224/45099H01L2224/45015H01L2924/207
Inventor YORITA, CHIKOYAMAGUCHI, YOSHIHIDESHIRAI, YUJIHASEGAWA, YU
Owner RENESAS ELECTRONICS CORP
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