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Method for etching metal nitride with high selectivity to other materials

Active Publication Date: 2010-08-19
TOKYO ELECTRON LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

As the size of semiconductor devices is reduced, process development and integration issues are key challenges for new gate stack materials including high-permittivity dielectric materials (also referred to herein as “high-k” materials).

Method used

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  • Method for etching metal nitride with high selectivity to other materials
  • Method for etching metal nitride with high selectivity to other materials
  • Method for etching metal nitride with high selectivity to other materials

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Embodiment Construction

[0018] In the following description, for purposes of explanation and not limitation, specific details are set forth, such as a particular geometry of the plasma processing system and descriptions of various processes. However, it should be understood that the invention may be practiced in other embodiments that depart from these specific details.

[0019] In material processing methodologies, pattern etching can comprise the application of a thin layer of light-sensitive material, such as photo-resist, to an upper surface of a substrate that is subsequently patterned in order to provide a mask for transferring this pattern to the underlying thin film on a substrate during etching. The patterning of the light-sensitive material generally involves exposure of the light-sensitive material to a geometric pattern of electro-magnetic (EM) radiation using, for example, a micro-lithography system, followed by the removal of the irradiated regions of the light-sensitive material (as in the cas...

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Abstract

A method and system of etching a metal nitride, such as titanium nitride is described. The etching process comprises introducing a process composition having a halogen containing gas, such as Cl2, HBr, or BCl3, and a hydrocarbon gas having the chemical formula CxHy, where x and y are equal to unity or greater.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS [0001] This application is related to pending U.S. patent application Ser. No. 11 / 690,256, entitled “Method and system for dry etching a metal nitride” Attorney docket no. 313530-P0043, filed on Mar. 23, 2007. The entire content of this application is herein incorporated by reference in its entirety.BACKGROUND OF THE INVENTION [0002] 1. Field of Invention [0003] The present invention relates to a method and system for etching a metal nitride layer on a substrate using a dry plasma process. [0004] 2. Description of Related Art [0005] As the size of semiconductor devices is reduced, process development and integration issues are key challenges for new gate stack materials including high-permittivity dielectric materials (also referred to herein as “high-k” materials). Dielectric materials featuring a dielectric constant greater than that of SiO2 (k˜3.9) are commonly referred to as high-k materials. In addition, high-k materials may refer to diel...

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): B44C1/22
CPCH01L21/67069H01L21/32136
Inventor KO, AKITERUTAKAHASHI, HIROYUKISAWATAISHI, MASAYUKI
Owner TOKYO ELECTRON LTD
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