Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

MSD integrated circuits with shallow trench

a technology of integrated circuits and trenches, which is applied in the direction of semiconductor devices, semiconductor/solid-state device details, diodes, etc., can solve the problems of high gate charge, poor performance, and high manufacturing cost of conventional deep gate trenches, so as to reduce the space occupied and improve the effect of performan

Inactive Publication Date: 2010-09-23
FORCE MOS TECH CO LTD
View PDF5 Cites 39 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0005]It is therefore an aspect of the present invention to provide improved semiconductor power device configuration and manufacture processes for providing trench MOSFET device with embedded Schottky rectifier, Gate-Drain and Gate-Source diodes with shallow trench structure on single chip so that space occupied can be reduced, and performance improved.
[0006]Another aspect of the present invention is to provide improved semiconductor power device configuration and manufacture processes for providing trench MOSFET devices with embedded Schottky rectifier on single chip.
[0007]Another aspect of the present invention is to provide improved semiconductor power device configuration and manufacture processes for providing trench MOSFET devices with embedded Schottky rectifier, Gate-Source diode on single chip.

Problems solved by technology

However, assembly of those separately structures into single package with extra interconnection wires results in higher manufacturing cost, and poor performance due to increase in inductance from the extra interconnection wires.
Another constraint is that, when fabricating the structure shown in FIG. 1, the conventional deep gate trenches are encountering a technical difficulty of high gate charge.
However, the decreases may lead to increase of Rds, and lower breakdown voltage in termination if conventional field is used.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • MSD integrated circuits with shallow trench
  • MSD integrated circuits with shallow trench
  • MSD integrated circuits with shallow trench

Examples

Experimental program
Comparison scheme
Effect test

first embodiment

[0027]FIG. 5B is another cross-section C-D of the first embodiment as shown in FIG. 5C. The only difference between FIG. 5B and FIG. 5A is that there is an open area 250 of the drain metal on the top of the termination. A conventional metal field plate in the termination is provided to sustain breakdown voltage.

[0028]FIG. 5C is a top view of the first embodiment which shows Gate-Drain diode across termination with the open areas 250 in FIG. 5B of the drain metal. These open areas allow electrical field penetrate through the oxides during avalanche, and thus make benefits to avoid avalanche degradation caused by the metal field plate cross over the termination as shown in FIG. 5A.

[0029]FIG. 6 is a normalized measurement result of the relationship between breakdown voltage and metal width cross over metal field plate termination, which shows that breakdown voltage will be degraded when metal width W is greater than 5 um, It means that electrical field underneath the cross-over metal c...

second embodiment

[0030]FIG. 7A is the cross-section A-B of the present invention. The only difference between the structure of FIG. 7A and FIG. 5.A is that the embedded Schottky rectifier is a trench Schottky rectifier instead of junction barrier Schottky rectifier. The trench Schottky contact trench 272 is formed in said N epitaxial layer and other contact trench 271 formed in the trench gate 270 adjacent to said contact trench.

[0031]FIG. 7B is another cross-section C-D of the second embodiment. The only difference between FIG. 7B and FIG. 7A is that there is an open area 251 of the drain metal on the top of the termination.

[0032]FIGS. 8A to 8D is a serial of exemplary steps that are performed to form the inventive device configuration of FIG. 7A. FIG. 8A shows that an N doped epitaxial layer 200 is grown on an N+ doped substrate 201. A trench mask (not shown) is applied to open a plurality of trenches by employing a dry silicon etch process. In order to remove the plasma damage introduced in etchi...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A trench MOSFET device with embedded Schottky rectifier, gate-drain and gate-source diodes on single chip is formed with shallow trench structure to achieve device shrinkage and performance improvement. The present semiconductor devices achieve low Vf and reverse leakage current for embedded Schottky rectifier, have overvoltage protection for GS clamp diodes and avalanche protection for GD clamp diodes. More particularly, gate charge of the present semiconductor device is reduced due to the shallow trench surrounded by an additional N doped area around the bottom while keeping Rds low enough and at the same time, maintaining BV at a certain level

Description

FIELD OF THE INVENTION [0001]This invention relates generally to the cell structure, device configuration and fabrication process of power semiconductor devices. More particularly, this invention relates to an improved cell configuration and processes to manufacture trench MOSFET device with Schottky rectifier, Gate-Drain (GD) and Gate-Source (GS) diodes with shallow trench structure on single chip for device shrinkage and performance improvement.BACKGROUND OF THE INVENTION[0002]As shown in FIG. 1, normally for high efficiency DC / DC application, a Schottky rectifier is externally added in parallel with a MOSFET device to prevent a parasitic P / N body diode in the MOSFET from turning on in order to achieve higher speed and efficiency. The requirement for the clamping effect is that the forward voltage of the Schottky rectifier Vf is less than the parasitic body PN diode (˜0.7V). Besides the Schottky rectifier, a Gate-Source clamp diode with a breakdown voltage lower than the gate oxid...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L27/06
CPCH01L29/0619H01L29/8725H01L29/0878H01L29/1095H01L29/402H01L29/407H01L29/41766H01L29/4236H01L29/66727H01L29/66734H01L29/7806H01L29/7808H01L29/7811H01L29/7813H01L29/872H01L29/0638
Inventor HSIEH, FU-YUAN
Owner FORCE MOS TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com