System and method for transferring substrates in large scale processing of cigs and/or cis devices

Abstract

According to an embodiment, the present invention provide method for fabricating a copper indium diselenide semiconductor film. The method includes providing a plurality of substrates, each of the substrates having a copper and indium composite structure, each of the substrate including a peripheral region, the peripheral region including a plurality of openings, the plurality of openings including at least a first opening and a second opening. The also includes transferring the plurality of substrates into a furnace, each of the plurality of substrates provided in a vertical orientation with respect to a direction of gravity, the plurality of substrates being defined by a number N, where N is greater than 5, the furnace including a holding apparatus, the holding apparatus including a first elongated member being configured to hang each of the substrates using at least the first opening. The method further includes introducing a gaseous species including a hydrogen species and a selenide species and a carrier gas into the furnace and transferring thermal energy into the furnace to increase a temperature from a first temperature to a second temperature, the second temperature ranging from about 350° C. to about 450° C. to at least initiate formation of a copper indium diselenide film from the copper and indium composite structure on each of the substrates.

Description

CROSS-REFERENCES TO RELATED APPLICATIONS[0001]This application claims priority to U.S. Provisional Patent Application No. 61 / 102,350, filed Oct. 2, 2008, entitled “SYSTEM AND METHOD FOR TRANSFERRING SUBSTRATES IN LARGE SCALE PROCESSING OF CIGS AND / OR CIS DEVICES” by inventor Robert D. Wieting, commonly assigned and incorporated by reference herein for all purposes.STATEMENT AS TO RIGHTS TO INVENTIONS MADE UNDER FEDERALLY SPONSORED RESEARCH AND DEVELOPMENT[0002]NOT APPLICABLEREFERENCE TO A “SEQUENCE LISTING,” A TABLE, OR A COMPUTER PROGRAM LISTING APPENDIX SUBMITTED ON A COMPACT DISK[0003]NOT APPLICABLEBACKGROUND OF THE INVENTION[0004]The present invention relates generally to photovoltaic techniques. More particularly, the present invention provides a method and structure for a thin film photovoltaic device using a copper indium diselenide species (CIS), copper indium gallium diselenide species (CIGS), and / or others. The invention can be applied to photovoltaic modules, flexible she...

AI Technical Summary

Benefits of technology

[0009]It is to be appreciated that the present invention provides numerous benefits over conventional techniques. Among other things, the systems and processes of the present invention are compatible with conventional systems, which allows cost effective implementation. In various embodiments, hanging device is provided within processing chamber to allow easy transfer and to ensure structure integrity of the CIS and / or CIGS devices. For example, the substrates are specific designed to be compatible with the hanging debice. There are other benefits as well.

Problems solved by technology

In the process of manufacturing CIS and / or CIGS types of thin films, there are various manufacturing challenges, such as maintaining structure integrity of substrate materials, ensuring uniformity and granularity of the thin film material, etc.

Some of the difficulties in manufacturing are associated with transferring substrates to processing chambers, as substrates for CIS and / or CIGS devices are relatively heavy (e.g., 10 pounds per substrate).

While conventional techniques in the past have addressed some of these issues, they are often inadequate in various situations.

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