Method for manufacturing substrate for semiconductor element, and semiconductor device
Inactive Publication Date: 2012-01-26
TOPPAN PRINTING CO LTD
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Benefits of technology
[0033]According to the present invention, when a substrate for a semiconductor element provided with a premold is manufactured, the height of the bottom surface of the connection land can be processed to be lower than the surrounding premold resin. As a result, the premold resin around the connection land serves as a wall. Thus, it is possible to mount a solder ball with a high yield without the ball dropping from a land when the solder ball is mounted.
Problems solved by technology
Therefore, there is a problem in that the interposer is not suitable for a semiconductor element having a large number of terminals.
According to a semiconductor element having a small area and a large number of terminals, it is difficult to convert a pitch when an interposer has only one layer of wiring layer.
However, the reliability and stability of the connection are reduced.
Thus, the above configuration is not suitable for mounting on a vehicle, which requires a high degree of reliability.
Another problem is that, during a process of manufacturing an interposer, it is necessary to discard the holding material.
This discarding procedure is believed to lead to an increase in costs.
This leads to an increase in costs.
However, there is a problem in the technology described in Japanese Unexamined Patent Application, First Publication No.
Method used
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[0049]The size of each individual unit of the manufactured BGA is 10 mm angle. The BGA has an external connection part. The external connection part is shaped like an array from a planar view with 168 pins. This BGA is mounted on the substrate at multiple surfaces. After the following manufacturing steps are performed, a cutting is made, a trimming is made, and individual substrates of a BGA type are obtained.
[0050]First, as shown in FIG. 1A, a long, band-like copper substrate 1 is provided. The width of the substrate is 150 mm, while the thickness of the substrate is 150 μm. Next, as shown in FIG. 1B, a photosensitive resist 2 (OFPR4000, manufactured by Tokyo Ohka Kogyo, Co., Ltd.) is coated to both surfaces of the copper substrate 1 with a roll coater. The photosensitive resist 2 is coated so that the thickness of the photosensitive resist 2 is 5 μm. Thereafter, a prebaking is performed at a temperature of 90° C.
[0051]Next, a pattern exposure is performed from both surfaces via a ...
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Provided is a manufacturing method of a substrate for a semiconductor element including the steps of: providing a first photosensitive resin layer on a first surface of a metal plate; providing a second photosensitive resin layer on a second surface different from the first surface of the metal plate; forming a first etching mask for forming a connection post on the first surface of the metal plate; forming a second etching mask for forming a wiring pattern on the second surface of the metal plate; forming the connection post by performing an etching from the first surface to a midway of the metal plate; filling in a premold resin to a portion of the first surface where the connection post does not exist; processing so that a height of the connection post of the first surface is lower than a height of the premold resin surrounding the connection post; and forming the wiring pattern by performing an etching on the second surface.
Description
CROSS REFERENCE TO RELATED APPLICATIONS[0001]This application is a continuation application based on PCT Patent Application No. PCT / JP2010 / 001897, filed Mar. 17, 2010, whose priority is claimed on Japanese Patent Application No. 2009-081784, filed Mar. 30, 2009, the entire content of which is incorporated herein by reference.BACKGROUND OF THE INVENTION[0002]1. Field of the Invention[0003]The present invention relates to a substrate for a semiconductor element. The semiconductor element is mounted on the substrate. In particular, the present invention relates to a method for manufacturing a substrate which has structural characteristics that are similar to those of a lead frame. The present invention also relates to a semiconductor device using the substrate.[0004]2. Description of the Related Art[0005]Various types of semiconductor elements such as memory, CMOS, CPU, and the like, are manufactured by a wafer process. These semiconductor elements have a terminal for electrical connec...
Claims
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Login to View More IPC IPC(8): H01L23/495H01L21/48
CPCH01L21/486H01L23/49861H01L24/48H01L2224/32225H01L2224/45144H01L2224/48227H01L2224/48247H01L2224/73265H01L2924/15311H01L2224/32245H01L2924/12042H01L24/45H01L2924/181H01L24/73H01L2924/15183H01L2924/00H01L2924/00012H01L2924/00015H01L23/50H01L23/12
InventorMANIWA, SUSUMUTSUKAMOTO, TAKEHITOTODA, JUNKO
OwnerTOPPAN PRINTING CO LTD