Unlock instant, AI-driven research and patent intelligence for your innovation.

Apparatus for manufacturing semiconductor devices

a semiconductor device and apparatus technology, applied in the direction of mechanical control devices, process and machine control, instruments, etc., can solve the problems of non-homogeneous deformation, wafer overlay defects, and the severe problem of bonding interface defects of molecular bonding

Inactive Publication Date: 2012-03-22
SOITEC SA
View PDF6 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The present invention relates to a bonding module for semiconductor wafers, which includes a vacuum chamber, a pumping device, and an optical system for positioning the wafers. The bonding module also has moveable chucks for holding the wafers, which can be made of metal or ceramics that resist bending and bowing. The apparatus also includes a loadlock module for transferring wafers to the bonding module and a control unit for positioning the wafers and initiating bonding. The invention also includes a manufacturing system for introducing wafers into the system and performing plasma treatment, cleaning, and transporting the wafers. The technical effects of the invention include improved accuracy in positioning the wafers and more reliable bonding under pressure.

Problems solved by technology

However, molecular bonding faces the severe problems of bonding interface defects, wafer misalignment and wafer overlay defects due to heterogeneous distortions which appear in the transfer layer during its assembly with the receiving substrate.
These distortions result from non-homogeneous deformations that appear in the layer while it is being assembled with the final substrate.
In fact, such distortions can lead to variations in position which may be in the order of several hundred nanometres or even microns.
Since these distortions are not homogenous, it is not possible to correct completely these misalignment errors during subsequently performed photolithography steps.
Thereby non or dysfunctional semiconductor devices may result.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Apparatus for manufacturing semiconductor devices
  • Apparatus for manufacturing semiconductor devices
  • Apparatus for manufacturing semiconductor devices

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0023]The present invention addresses the above-mentioned need and, accordingly, relates to an apparatus for the manufacture of semiconductor devices comprising a bonding module comprising a vacuum chamber to provide bonding of wafers under a pressure below atmospheric pressure, and a loadlock module connected to the bonding module and configured for wafer transfer to the bonding module and connected to a first vacuum pumping device configured to reduce the pressure in the loadlock module below atmospheric pressure.

[0024]According to the invention molecular bonding of wafers is performed in an evacuated vacuum chamber of a bonding module. Since the bonding is performed under (partial) vacuum, bonding interface defects, such as edge voids, can be significantly suppressed without affecting the bonding strength. In addition, wafers are transferred from the evacuated loadlock module to the vacuum chamber of the bonding module thereby significantly increasing the throughput as compared t...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
diameteraaaaaaaaaa
pressureaaaaaaaaaa
pressureaaaaaaaaaa
Login to View More

Abstract

The present invention relates to an apparatus for the manufacture of semiconductor devices wherein the apparatus includes a bonding module that has a pumping device; a vacuum chamber connected to the pumping device; and an optical system configured to determine the position of alignment marks on the surfaces of the semiconductor wafers to be bonded in the bonding module. The apparatus also includes a loadlock module connected to the bonding module and configured for wafer transfer to the bonding module. The loadlock module is also connected to a first vacuum pumping device configured to reduce the pressure in the loadlock module to below atmospheric pressure.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS[0001]This application is a division of application Ser. No. 12 / 888,251 filed Sep. 22, 2010.FIELD OF INVENTION[0002]The present invention relates to an apparatus for the manufacture of semiconductor devices wherein the apparatus comprises a bonding module for the molecular bonding of wafers.BACKGROUND OF THE INVENTION[0003]Three-dimensional (3-D) integrated circuit technology where circuit structures formed on several silicon-on-insulator (SOI) substrates are bonded together and integrated into a 3-D circuit with dense-vertical connections becomes of increasing importance in modern semiconductor technology (see, for example, paper by Burns et al., entitled A Wafer-Scale 3-D Circuit Integration Technology, IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 53, NO. 10, OCTOBER 2006, pages 2507-2516). The building blocks of the 3-D circuit integration technology are fully depleted SOI (FDSOI) circuit fabrication, precision waferwafer alignment, low-temp...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(United States)
IPC IPC(8): H01L21/00B32B41/00B32B37/10
CPCY10T156/10H01L21/67092H01L2924/0002H01L2924/00F16K51/02H01L21/67201H01L21/67126H01L21/681H01L21/6836B32B2309/68B32B2309/65B32B38/1858B32B2309/64H01L25/50
Inventor BROEKAART, MARCELRADU, IONUT
Owner SOITEC SA