Method and system for utilizing perovskite material for charge storage and as a dielectric

Inactive Publication Date: 2012-08-02
4D S
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

And in some cases, the price will even erode.
As these memory cells continue to shrink, the technology is starting to reach a barrier know as the quantum limit, that is, they are actually approaching molecular boundaries, so the cells cannot get any smaller.
Another issue associated with semiconductor memory manufacturing has been the substantial costs of the semiconductor foundries which can run up to more than a billion dollars to establish with amortizing expenses, thereby inflating the unit cost of memory chips.
In recent history, this represented price barriers compared with cost per capacity of a disk drive file.
In Flash memories, there have been improvements in the Moore's Law effect but that has become a diminishing proposition because as the cells started getting smaller and smaller, write cycle limitations and ability to support dynamic ranges are diminished.
But another issue with Flash memory is its limitations in write speeds.
Another issue is the number of write cycle limitations the cell will tolerate before it permanently fails.

Method used

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  • Method and system for utilizing perovskite material for charge storage and as a dielectric
  • Method and system for utilizing perovskite material for charge storage and as a dielectric
  • Method and system for utilizing perovskite material for charge storage and as a dielectric

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Embodiment Construction

[0019]The present invention relates generally to memory devices, and more particularly to a memory device that includes a heterojunction oxide material. The following description is presented to enable one of ordinary skill in the art to make and use the invention and is provided in the context of a patent application and its requirements. Various modifications to the preferred embodiments and the generic principles and features described herein will be readily apparent to those skilled in the art. Thus, the present invention is not intended to be limited to the embodiments shown, but is to be accorded the widest scope consistent with the principles and features described herein.

[0020]The present invention is directed to a memory device. The memory device can be utilized in a variety of applications from a free standing nonvolatile memory to an embedded device in a variety of applications. These applications include but are not limited to embedded memory used in a wide range of SOC ...

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Abstract

A memory device is disclosed. In a first aspect the memory comprises a first doped awell; two wells of opposite doping implanted in the first doped well; and two bitlines located on top of the two wells. The memory includes a Perovsite material on top of the first doped well and located between two bitlines; and a wordline located above the Perovskite material. In a second aspect the memory comprises a first doped well; two wells of opposite doping implanted in the first doped well; and two bitlines located on top of the two wells. The memory includes a Perovskite material located within one of the bitlines and a wordline located above the first doped well and located between the two bitlines.

Description

CROSS-REFERENCE TO RELATED APPLICATION[0001]This application is claiming under 35 USC 119(e), the benefit of U.S. provisional patent application Ser. No. 61 / 318,684, filed Mar. 29, 2011. This application is related to Application No. 61 / 234,183, entitled “Heterojunction Oxide Non-Volatile Memory Device,” filed Aug. 14, 2009, and Application Number PCT / US 2010 / 045667, entitled, “Heterojunction Oxide Non-Volatile Memory Device,” filed on Aug. 16, 2010 both of which are incorporated by reference herein.FIELD OF THE INVENTION[0002]The present invention relates generally to memory devices, and more particularly to a memory device that includes heterojunction oxide material.BACKGROUND OF THE INVENTION[0003]As Moore's Law has been predicting, the capacity of memory cells on silicon for the past 15-20 years has effectively doubled each year. Moore's Law is that every year the amount of structures or gates on a silicon wafer will double, but the price will essentially stay the same. And in s...

Claims

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Application Information

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IPC IPC(8): G11C11/22H01L29/51
CPCH01L21/28291H01L27/11507H01L28/55H01L29/516H01L29/78391G11C13/0007G11C11/22H01L29/51H01L29/6684H01L29/40111H10B53/30
InventorLAN, ZHIDA
Owner4D S