Fabrication of RRAM Cell Using CMOS Compatible Processes

a technology of rram cell and cmos, applied in the direction of bulk negative resistance effect device, electrical apparatus, semiconductor device, etc., can solve the problems of patterning errors in photolithography operations, more difficult to incorporate rram cell into integrated circuit devices manufactured using modern cmos processing technology and methods
US20120241710A1Inactive Publication Date: 2012-09-27NANYANG TECH UNIV +1
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Patent Information

Authority / Receiving Office
US · United States
Current Assignee / Owner
NANYANG TECH UNIV
Publication Date
2012-09-27
Estimated Expiration
Not applicable · inactive patent

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Abstract

Generally, the subject matter disclosed herein relates to the fabrication of an RRAM cell using CMOS compatible processes. A resistance random access memory device is disclosed which includes a semiconducting substrate, a top electrode, at least one metal silicide bottom electrode formed at least partially in the substrate, wherein at least a portion of the at least one bottom electrode is positioned below the top electrode, and at least one insulating layer positioned between the top electrode and at least a portion of the at least one bottom electrode. A method of making a resistance random access memory device is disclosed that includes forming an isolation structure in a semiconducting substrate to thereby define an enclosed area, performing at least one ion implantation process to implant dopant atoms into the substrate within the enclosed area, after performing the at least one ion implantation process, forming a layer of refractory metal above at least portions of the substrate, and performing at least one heat treatment process to form at least one metal silicide bottom electrode at least partially in the substrate, wherein at least a portion of the at least one bottom electrode is positioned below at least a portion of a top electrode of the device.
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Description

BACKGROUND

[0001] 1. Field of the Disclosure

[0002] Generally, the present disclosure relates to sophisticated integrated circuits, and, more particularly, to the fabrication of an RRAM cell with, in one embodiment, one or more bottom electrodes formed by silicidation using CMOS compatible processes.

[0003] 2. Description of the Related Art

[0004] Memory circuits and devices are widely used in the electronics industry. In general, memory devices permit the storage of a “bit” of information, i.e., a “1” (logically high) or a “0” (logically low) signal. Vast numbers of these memory devices are formed on a single chip so as to permit the storage of a vast quantity of digital information. Various forms of such devices, and read / write circuitry employed with such devices, have been used in the industry for years, e.g., RAM (Random Access Memory) devices, ROM (Read Only Memory) devices, EEPROM (Electrically Erasable Read Only Memory) devices, etc.

[0005] Nonvolatile memory is a type of memory that ...

Claims

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