Method of patterning a device

Inactive Publication Date: 2014-10-30
ORTHOGONAL
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0026]In an embodiment, using a mixture of first and second solvents in the developing solution can improve development performance. In an embodiment, using a stripping solution that includes at least the first or second solvent of the developing solution can simplify recycling of such solvents. In an embodiment, using a mixture of first and second solvents in bo

Problems solved by technology

Although the use of photoresists is routine in traditional electronic devices based on inorganic materials, photolithography has been difficult to achieve for devices using organic materials, thereby hindering the development of devices based on these materials.
Specifically, organic materials are much less resistant to the solvents that are used for conventional photolithography, as well as to the intense light sources that are sometimes used in these processes, with the result that conventional lithographic solvents and processes tend to degrade organic electronics.
Although there have been various attempts to overcome these problems, e.g., by ink jet printing or shadow mask deposition, these alternative methods do not produce the same results as would be obtained with successful photolithography.
Specifically, neither

Method used

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Experimental program
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embodiment 1

General Embodiment 1

[0062]In this embodiment, the first solvent is one that has a high degree of discrimination between solubilizing exposed and unexposed regions of the photoresist layer. Typically, the first solvent dissolves the unexposed regions at a moderate rate, but dissolves the exposed (switched) region at a much lower rate, preferably at least 10× lower. This helps produce an image with reasonable contrast and tolerable processing latitude, but an image may take longer than desired to develop appropriately. The second solvent is one that dissolves the unexposed regions at a rate greater than the first solvent rate, and preferably, also dissolves the exposed regions a rate higher than the first solvent rate. That is, the second solvent is generally a stronger solvent than the first solvent for both exposed and unexposed areas. Both should be selected to have a low interaction with sensitive, active organic materials if present during processing. Preferably the first and sec...

embodiment 2

General Embodiment 2

[0064]Here, the first solvent is one that has a high degree of discrimination between solubilizing exposed and unexposed regions of photoresist layer. Typically, the first solvent dissolves the unexposed regions at a moderate rate, but dissolves the exposed (switched) region at a much lower rate, preferably at least 10× lower. This helps produce an image having reasonable contrast and with good processing latitude, but an image may sometimes take longer than desired to develop appropriately. The second solvent in this embodiment is one that has higher solubilizing power than the first solvent with respect to removing the unexposed regions, but generally lacks sufficient solubilizing power to dissolve the exposed photoresists alone. For example, the first solvent, although it shows some development and good discrimination, may be too slow to be practical on its own. Conversely, the second solvent may be too fast to control, and although it is not capable of stripp...

embodiment 3

General Embodiment 3

[0066]Here, the first solvent generally provides low solubilizing strength with respect to both the exposed and unexposed regions of the photoresist. The second solvent is one that can solubilize both exposed and unexposed portions, but has a higher dissolution rate for the unexposed portions. When sufficient second solvent is added to the first solvent, the developing solution is capable of selectively solubilizing unexposed regions, i.e., dissolving unexposed regions at a rate that is at least 10 times higher than solubilization of the exposed areas. In this embodiment, the volume percentage of the second solvent is in a range from 20 to 80%, preferably 25 to 60%. The stripping solution will include the second solvent, optionally with a small amount of the first solvent or protic solvent or both. The volume of the second solvent in the stripping solution in this embodiment is at least 80%, preferably at least 90%.

[0067]An advantage of certain embodiments of the...

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Abstract

A photoresist layer comprising a fluorinated photoresist material is formed on a device substrate and exposed to patterned radiation. The exposed photoresist layer is contacted with a developing agent to remove a portion of the exposed photoresist layer in accordance with the patterned light, thereby forming a developed structure having a first pattern of photoresist covering the substrate and a complementary second pattern of uncovered substrate corresponding to the removed portion of photoresist, the developing agent comprising a mixture of first and second fluorinated solvents, wherein at least one of the first and second solvents is a hydrofluoroether. The developed structure is treated to form a treated structure. The treated structure is contacted with a stripping agent to remove the first pattern of photoresist, the stripping agent comprising at least the first or second solvent in a concentration different from the developing agent.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS[0001]This application claims the benefit of U.S. Provisional Application No. 61 / 815,465, filed on Apr. 24, 2013, the entire disclosure of which is hereby incorporated herein by reference. This application is also related to U.S. patent application Ser. No. ______ entitled “Method of Patterning a Device,” Attorney Docket No. 16480.0012USU2, filed on even date herewith.STATEMENT REGARDING FEDERALLY-SPONSORED RESEARCH OR DEVELOPMENT[0002]This invention was made with Government support under SBIR Phase II Grant No. 1058509 awarded by the National Science Foundation (NSF). The government may have certain rights in the invention.BACKGROUND[0003]1. Field of the Invention[0004]The present invention relates to the use of fluorinated solvents and solvent blends for processing fluorinated photoresists. Such solvents and photoresists are particularly useful for patterning organic electronic and biological materials.[0005]2. Discussion of Related Art[0006]...

Claims

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Application Information

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IPC IPC(8): G03F7/40
CPCG03F7/40G03F7/038G03F7/422G03F7/20G03F7/0046G03F7/0392G03F7/0397G03F7/325G03F7/426
Inventor WRIGHT, CHARLES WARRENFREEMAN, DIANE CAROLBYRNE, FRANK XAVIERDEFRANCO, JOHN ANDREW
Owner ORTHOGONAL
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