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Semiconductor device and method for manufacturing the same

a semiconductor and semiconductor technology, applied in the direction of semiconductor devices, electrical devices, transistors, etc., can solve the problems of deviation from the stoichiometric composition of an oxide semiconductor, and achieve the effect of stable electric characteristics

Inactive Publication Date: 2014-12-18
SEMICON ENERGY LAB CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The patent describes a method to reduce impurities in a thin film transistor device using a special insulating layer with defects. These defects help to move impurities like hydrogen or moisture from the oxide semiconductor layer into the insulating layer, where they are binding with excess oxygen. This results in a reduction of impurities in the oxide semiconductor layer and improves the stability and reliability of the device. The method can be carried out by using a capture-type vacuum pump to reduce impurities in the insulating layer.

Problems solved by technology

However, a deviation from the stoichiometric composition in an oxide semiconductor arises in a thin film formation process.

Method used

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  • Semiconductor device and method for manufacturing the same
  • Semiconductor device and method for manufacturing the same
  • Semiconductor device and method for manufacturing the same

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embodiment 1

[0062]In this embodiment, an embodiment of a semiconductor device and a manufacturing method thereof will be described with reference to FIGS. 1A to 1E. The semiconductor device described in this embodiment is a thin film transistor.

[0063]FIGS. 1A to 1E illustrate an example of a cross-sectional structure of a semiconductor device. A thin film transistor 110 illustrated in FIGS. 1A to 1E has one type of a bottom-gate structure and is also referred to as an inverted staggered thin film transistor.

[0064]The thin film transistor 110 illustrated in FIGS. 1A to 1E includes, over a substrate 100 having an insulating surface, a gate electrode layer 111, a gate insulating layer 102, an oxide semiconductor layer 112, an oxygen-excess mixed region 119, a source electrode layer 115a, and a drain electrode layer 115b. In addition, an insulating layer 116 having defects which covers the thin film transistor 110 and overlaps with the oxide semiconductor layer 112 with the oxygen-excess mixed regi...

embodiment 2

[0161]In this embodiment, another example of a thin film transistor which can be applied to a semiconductor device disclosed in this specification will be described. The same portion as or a portion having a function similar to those in the above embodiment can be formed in a manner similar to that described in the above embodiment, and also the steps similar to those in the above embodiment can be performed in a manner similar to that described in the above embodiment, and repetitive description is omitted. In addition, detailed description of the same portions is not repeated.

[0162]FIGS. 2A to 2D illustrate an example of a cross-sectional structure of a semiconductor device. A thin film transistor 130 illustrated in FIGS. 2A to 2D has one type of a bottom-gate structure and is also referred to as an inverted staggered thin film transistor.

[0163]The thin film transistor 130 illustrated in FIGS. 2A to 2D includes, over the substrate 100 having an insulating surface, the gate electro...

embodiment 3

[0195]In this embodiment, another example of a thin film transistor which can be applied to a semiconductor device disclosed in this specification will be described.

[0196]A semiconductor device and a manufacturing method thereof in this embodiment will be described with reference to FIGS. 3A to 3E.

[0197]FIGS. 3A to 3E illustrate an example of a cross-sectional structure of a semiconductor device. A thin film transistor 160 illustrated in FIGS. 3A to 3E has one type of a bottom-gate structure called a channel-protective structure (also referred to as a channel-stop structure) and is also referred to as an inverted staggered thin film transistor.

[0198]Although the thin film transistor 160 is described as a single-gate thin film transistor, a multi-gate thin film transistor including a plurality of channel formation regions can be formed if needed.

[0199]Hereinafter, a process for manufacturing the thin film transistor 160 over the substrate 150 will be described with reference to FIGS....

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Abstract

An object is to provide a semiconductor device including an oxide semiconductor with stable electric characteristics can be provided. An insulating layer having many defects typified by dangling bonds is formed over an oxide semiconductor layer with an oxygen-excess mixed region or an oxygen-excess oxide insulating layer interposed therebetween, whereby impurities in the oxide semiconductor layer, such as hydrogen or moisture (a hydrogen atom or a compound including a hydrogen atom such as H2O), are moved through the oxygen-excess mixed region or oxygen-excess oxide insulating layer and diffused into the insulating layer. Thus, the impurity concentration of the oxide semiconductor layer is reduced.

Description

TECHNICAL FIELD[0001]The present invention relates to a semiconductor device using an oxide semiconductor and a manufacturing method thereof.[0002]Note that the semiconductor device in this specification refers to all the devices which can operate by using semiconductor characteristics, and an electro-optical device, a semiconductor circuit, and an electronic device are all semiconductor devices.BACKGROUND ART[0003]A technique of forming a thin film transistor (TFT) by using a thin semiconductor film that is formed over a substrate having an insulating surface has attracted attention. A thin film transistor is used for a display device typified by a liquid crystal television. Besides a silicon-based semiconductor material which is known as a material for a semiconductor thin film applicable to a thin film transistor, an oxide semiconductor has attracted attention.[0004]As a material for the oxide semiconductor, zinc oxide and a material containing zinc oxide as its component are kno...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): H01L29/786H01L29/423H01L29/51
CPCH01L29/7869H01L29/42384H01L29/42364H01L29/518H01L27/1225H01L29/78606H01L29/78696H01L29/66969H01L21/02266H01L29/66742
Inventor YAMAZAKI, SHUNPEIMIYANAGA, AKIHARUTAKAHASHI, MASAHIROKISHIDA, HIDEYUKISAKATA, JUNICHIRO
Owner SEMICON ENERGY LAB CO LTD
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