74 results about "Oxygen excess" patented technology

An object is to improve reliability of a semiconductor device. A semiconductor device including a driver circuit portion and a display portion (also referred to as a pixel portion) over the same substrate is provided. The driver circuit portion and the display portion include thin film transistors in which a semiconductor layer includes an oxide semiconductor; a first wiring; and a second wiring. The thin film transistors each include a source electrode layer and a drain electrode layer. In the thin film transistor in the driver circuit portion, the semiconductor layer is sandwiched between a gate electrode layer and a conductive layer. The first wiring and the second wiring are electrically connected to each other in an opening provided in a gate insulating film through an oxide conductive layer.

An object is to provide a semiconductor device including an oxide semiconductor with stable electric characteristics can be provided. An insulating layer having many defects typified by dangling bonds is formed over an oxide semiconductor layer with an oxygen-excess mixed region or an oxygen-excess oxide insulating layer interposed therebetween, whereby impurities in the oxide semiconductor layer, such as hydrogen or moisture (a hydrogen atom or a compound including a hydrogen atom such as H2O), are moved through the oxygen-excess mixed region or oxygen-excess oxide insulating layer and diffused into the insulating layer. Thus, the impurity concentration of the oxide semiconductor layer is reduced.

An object is to provide a semiconductor device including a thin film transistor with excellent electrical characteristics and high reliability and a method for manufacturing the semiconductor device with high mass productivity. A main point is to form a low-resistance oxide semiconductor layer as a source or drain region after forming a drain or source electrode layer over a gate insulating layer and to form an oxide semiconductor film thereover as a semiconductor layer. It is preferable that an oxygen-excess oxide semiconductor layer be used as a semiconductor layer and an oxygen-deficient oxide semiconductor layer be used as a source region and a drain region.

A structure is employed in which a first protective insulating layer; an oxide semiconductor layer over the first protective insulating layer; a source electrode and a drain electrode that are electrically connected to the oxide semiconductor layer; a gate insulating layer that is over the source electrode and the drain electrode and overlaps with the oxide semiconductor layer; a gate electrode that overlaps with the oxide semiconductor layer with the gate insulating layer provided therebetween; and a second protective insulating layer that covers the source electrode, the drain electrode, and the gate electrode are included. Furthermore, the first protective insulating layer and the second protective insulating layer each include an aluminum oxide film that includes an oxygen-excess region, and are in contact with each other in a region where the source electrode, the drain electrode, and the gate electrode are not provided.

Provided is a catalyst with a noble metal efficiently supported on the surfacemost thereof. A composite oxide-containing layer is formed on a catalyst carrier so as to contain a perovskite-type composite oxide represented by the following general formula (1) and an other composite oxide, and a noble metal layer is further formed on the catalyst carrier so as to be supported on the surfacemost of the catalyst carrier by immersing the catalyst carrier formed with the composite oxide-containing layer in an aqueous noble metal salt solution to impregnate the catalyst carrier with the aqueous noble metal salt solution:AxByO3±δ  (1)(wherein A represents at least one element selected from rare earth elements and alkaline earth metals; B represents at least one element selected from transition elements (excluding rare earth elements); x represents an atomic ratio of less than 1; y represents an atomic ratio of 1.0; and δ represents an oxygen excess or an oxygen deficiency.)

A synthetic quartz glass for an optical member which is free from compaction and rarefaction is obtained. A synthetic quartz glass for an optical member to be used for an optical device employing a light having a wavelength of at most 400 nm and at least 170 nm as a light source, which contains substantially no oxygen excess defects, dissolved oxygen molecules nor reduction type defects, which has a chlorine concentration of at most 50 ppm and a OH group concentration of at most 100 ppm, and which contains oxygen deficient defects within a concentration range of at most 5×1014 defects / cm3 and at least 1×1013 defects / cm3. The fluorine concentration is preferably at most 100 ppm.

Provided is a method and a device for recovering and purifying argon in monocrystalline silicon production. The method comprises firstly conducting coarse oil removal on argon recovered from a single crystal furnace, compressing, cooling and conducting high-precision oil removal and dedusting; secondly enabling hydrocarbon such as methane and carbon monoxide to be reacted with oxygen to generate water and carbon dioxide through a high temperature catalytic reaction and guaranteeing the oxygen to be excessive in the catalytic reaction; thirdly enabling excessive oxygen to be reacted with added hydrogen to generate the water under effects of a catalytic agent after cooling and enabling argon after two catalytic reactions to penetrate through a normal temperature adsorption unit to absorb the water and the carbon dioxide; cooling the argon, sending a low temperature rectifying tower, enabling the argon, the nitrogen and the hydrogen to produce rectification separation, obtaining pure liquid argon, and conducting repeated heating to obtain pure argon products. The device mainly comprises an oil filter, a catalytic reactor of the hydrocarbon of high temperature catalytic oxidation carbon monoxide and methane and the like, a normal temperature hydrogenation deoxygenization catalytic reactor, a normal temperature adsorption unit for absorbing the carbon dioxide and the water at the normal temperature and the low temperature rectifying tower for rectifying and separating the hydrogen and the nitrogen at the low temperature. The device has the advantages of being high in argon recovery rate, high in purity of recovered argon, low in oxygen content, low in energy consumption for recovery and purification and the like.

A catalyst (27) suitable for the reduction of an NOx in an exhaust gas with ammonia in an oxygen-excess atmosphere is placed in an engine exhaust passage. An aqueous urea solution is supplied to the catalyst (27) through a supply control valve (32) to store a part of urea supplied to the catalyst (27) in the inside of the catalyst (27) and reduce the NOx contained in the exhaust gas with ammonia produced from urea stored in the catalyst (27). It is determined whether or not the storage volume of the catalyst (27) is larger than a predetermined allowable upper limit volume. The supply of the aqueous urea solution is stopped when the storage volume of the catalyst (27) is determined to be larger than the allowable upper limit volume.