Microelectronic assemblies with integrated circuits and interposers with cavities, and methods of manufacture
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[0017]The embodiments described in this section illustrate but do not limit the invention. The invention is defined by the appended claims.
[0018]FIG. 3A shows the beginning stages of fabrication of an interposer 120.1 according to some embodiments of the present invention. The beginning and other stages are similar to those described in U.S. patent application Ser. No. 14 / 214,365, filed Mar. 14, 2014 by Invensas Corporation, and U.S. provisional patent application No. 61 / 952,066, filed Mar. 12, 2014 by Shen et al., both incorporated herein by reference. The interposer substrate 120.1S is initially chosen to be sufficiently thick to provide easy handling and adequate heat dissipation in fabrication. In some embodiments, substrate 120.1S is a monocrystalline silicon wafer of a 200 mm or 300 mm diameter and a thickness of 650 micron or more. These materials and dimensions are exemplary and do not limit the invention. For example, substrate 120.1S can be made of other semiconductor mate...
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