Use of non-oxidizing strong acids for the removal of ion-implanted resist
a resist and strong acid technology, applied in photomechanical treatment, instruments, electrical equipment, etc., can solve the problems of not being able to function or function poorly, and methods that do not work well on germanium-containing substrates
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Benefits of technology
Problems solved by technology
Method used
Image
Examples
example 1
[0099]The following formulations were prepared and were used in a process described herein to remove bulk and hardened resist from a coupon.
FormulationFluoride speciesMSA (99%)A2.56 wt % hexafluorotitanic acid97.44 wt %B5.21 wt % tetrabutylammonium94.79 wt %tetrafluoroborateC6.20 wt % tetrabutylammonium93.80 wt %trifluoromethanesulfonateD0.90 wt % ammonium bifluoride99.10 wt %E2.67 wt % tetramethylammonium97.33 wt %fluoride tetrahydate (98%)F0.59 wt % ammonium fluoride99.41 wt %G2.90 wt % fluoboric acid (48%)97.10 wt %H0.66 HF (0.66%)99.34 wt %I0.33 HF (0.66%)99.67 wt %J0.11 HF (0.66%)99.89 wt %
[0100]The implant resist stripping process included immersing a coupon in each Formulation A-J for 10 minutes at room temperature, followed by a DMSO rinse, followed by an isopropanol rinse, followed by a N2 dry. The etch rate measurements of blanketed wafers included measuring the initial thickness of the SiO2 (100 nm thermal oxide on Si) and PECVD SiN (400 nm PECVD SiNx on Si) coupons, imme...
example 2
[0104]Additional studies were performed with formulation H. In a first experiment, a patterned wafer coupon having medium dose high energy implant on Ge was immersed without stirring in DMSO for 10 min at 20° C. The coupon was removed and rinsed with isopropanol. Referring to FIGS. 2A-2B, which shows the AFM scan in FIG. 2B and the cross-sectional analysis in FIG. 2A it can be seen that most of the crust and all of the “rails” are still present.
[0105]In a second experiment, a patterned wafer coupon having medium dose high energy implant on Ge was immersed without stirring in formulation H for 10 min at 20° C. The coupon was removed and rinsed with DMSO followed by a second rinse with isopropanol. Referring to FIGS. 3A-3B, which shows the AFM scan in FIG. 3B and the cross-sectional analysis in FIG. 3A it can be seen that a small amount of the “rails” are still present. Although not wishing to be bound by theory, it is thought that the debris is re-deposited crust and rail particles.
[...
example 3
[0109]Solutions K-U were prepared as indicated in Table 2. Germanium coupons were pre-measured using ellipsometry and treated with 18 hr old solutions K-U for 10 minutes at room temperature. The coupons were rinsed with DMSO for 60 sec, then with isopropanol for 30 sec, then dried with nitrogen gas. The coupons were measured again to determine Ge loss and GeO2 loss.
MSAconc.conc.Formulation(99+%) / wt %H2SO4 / wt %MSMHF / wt %Ge loss / ÅGeO2 loss / ÅK99.8000.23.7 ± 1.314.0 ± 0.4L89.81000.21.4 ± 0.712.9 ± 0.4M89.80100.22.9 ± 0.714.1 ± 0.2N79.810100.25.9 ± 1.513.3 ± 0.1O059.8400.2−4.9 ± 1.9 13.4 ± 0.2P94.8500.25.5 ± 1.312.9 ± 0.3Q79.82000.24.5 ± 0.4−1.9 ± 3.4R59.84000.21.2 ± 0.511.8 ± 0.1S29.87000.24.6 ± 0.711.9 ± 0.2T9.89000.2−1.7 ± 1.9 11.9 ± 0.1U099.800.2−0.7 ± 1.8 12.2 ± 0.4
[0110]Referring to FIGS. 6 and 7, which are AFM micrographs of germanium coupons immersed in formulations N and U, respectively, it can be seen that formulation N removed the rails completely from site 1 and mostly remove...
PUM
| Property | Measurement | Unit |
|---|---|---|
| temperature | aaaaa | aaaaa |
| dielectric constant | aaaaa | aaaaa |
| standard oxidation/reduction potential | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
Login to View More