Methods using a peroxide-generating compound to remove group VIII metal-containing residue

Abstract

A method for cleaning substrates to remove Group VIII metal-containing, particularly platinum-containing, residue using a cleaning composition that includes a peroxide-generating compound.

Description

FIELD OF THE INVENTION[0001]The present invention pertains to processing and post-processing (e.g., post-etching or post-planarization) compositions and methods using such compositions in the removal of Group VIII metal-containing residue (i.e., contaminants), particularly platinum-containing residue, from substrates and equipment. More particularly, the present invention is directed to the use of hydrogen peroxide, t-butyl peroxide, or other peroxide-generating compounds in cleaning compositions and methods.BACKGROUND OF THE INVENTION[0002]Films of metals and metal oxides, particularly the heavier elements of Group VIII, are becoming important for a variety of electronic and electrochemical applications. This is at least because many of the Group VIII metal films are generally unreactive toward silicon and metal oxides, resistant to diffusion of oxygen and silicon, and are good conductors. Oxides of certain of these metals also possess these properties, although perhaps to a differ...

AI Technical Summary

Benefits of technology

[0012]The compositions are designed for effective removal of Group VIII metal-containing residue, particularly platinum-containing residue (e.g., particulate contaminants containing platinum or other forms of contamination containing

Problems solved by technology

Many surfaces that result during the formation of Group VIII metal-containing films, particularly in the wafer fabrication of semiconductor devices, do not have uniform height, and therefore, the wafer thickness is also non-uniform.

Further, surfaces may have defects such as crystal lattice damage, scratches, roughness, or embedded particles of dirt or dust.

A large fraction of yield losses in wafer fabrication or processing of semiconductor devices is attributed to contamination.

Particularly problematic, however, is contamination from material removed from a surface during processing, such as, for example, etching or planarization.

Such contaminants may diffuse into the surface of the substrate and down fracture paths.

None of these compositions have been reported to be useful in post-processing of platinum-containing surfaces.

Another problem that has not been adequately addressed is the cleaning of the planarization or polishing surface of equipment both during and after processing.

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