Methods using a peroxide-generating compound to remove group VIII metal-containing residue

Inactive Publication Date: 2005-06-14
MICRON TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Benefits of technology

[0012]The compositions are designed for effective removal of Group VIII metal-containing residue, particularly platinum-containing residue (e.g., particulate contaminants containing platinum or other forms of contamination containing

Problems solved by technology

Many surfaces that result during the formation of Group VIII metal-containing films, particularly in the wafer fabrication of semiconductor devices, do not have uniform height, and therefore, the wafer thickness is also non-uniform.
Further, surfaces may have defects such as crystal lattice damage, scratches, roughness, or embedded particles of dirt or dust.
A large fraction of yield losses in wafer fabrication or processing of semiconductor devices is attributed to contamination.
Particularly p

Method used

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  • Methods using a peroxide-generating compound to remove group VIII metal-containing residue
  • Methods using a peroxide-generating compound to remove group VIII metal-containing residue

Examples

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EXAMPLE

[0038]A semiconductor wafer is processed using a polishing tool thereby producing a platinum film on the surface of the wafer. This is immersed in a bath containing a solution of deionized water, ammonium citrate, and hydrogen peroxide in a volume ratio of 10 to 1 to 0.5 and at a temperature of 40° C. Megasonics is applied to suspend the slurry particles and the platinum residue in solution. The wafer is then transferred to a vessel for rinsing and then drying.

[0039]The foregoing detailed description and examples have been given for clarity of understanding only. No unnecessary limitations are to be understood therefrom. The invention is not limited to the exact details shown and described, for variations obvious to one skilled in the art will be included within the invention defined by the claims. The complete disclosures of all patents, patent documents, and publications listed herein are incorporated by reference, as if each were individually incorporated by reference.

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Abstract

A method for cleaning substrates to remove Group VIII metal-containing, particularly platinum-containing, residue using a cleaning composition that includes a peroxide-generating compound.

Description

FIELD OF THE INVENTION[0001]The present invention pertains to processing and post-processing (e.g., post-etching or post-planarization) compositions and methods using such compositions in the removal of Group VIII metal-containing residue (i.e., contaminants), particularly platinum-containing residue, from substrates and equipment. More particularly, the present invention is directed to the use of hydrogen peroxide, t-butyl peroxide, or other peroxide-generating compounds in cleaning compositions and methods.BACKGROUND OF THE INVENTION[0002]Films of metals and metal oxides, particularly the heavier elements of Group VIII, are becoming important for a variety of electronic and electrochemical applications. This is at least because many of the Group VIII metal films are generally unreactive toward silicon and metal oxides, resistant to diffusion of oxygen and silicon, and are good conductors. Oxides of certain of these metals also possess these properties, although perhaps to a differ...

Claims

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Application Information

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IPC IPC(8): B08B6/00H01L21/02H01L21/302H01L21/461C11D3/39C11D11/00H01L21/306H01L21/321H01L21/3213
CPCC11D3/3945C11D3/3947H01L21/02074H01L21/02071C11D11/0047
Inventor MORGAN, PAUL A.
Owner MICRON TECH INC
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