Methods using a peroxide-generating compound to remove group VIII metal-containing residue
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[0038]A semiconductor wafer is processed using a polishing tool thereby producing a platinum film on the surface of the wafer. This is immersed in a bath containing a solution of deionized water, ammonium citrate, and hydrogen peroxide in a volume ratio of 10 to 1 to 0.5 and at a temperature of 40° C. Megasonics is applied to suspend the slurry particles and the platinum residue in solution. The wafer is then transferred to a vessel for rinsing and then drying.
[0039]The foregoing detailed description and examples have been given for clarity of understanding only. No unnecessary limitations are to be understood therefrom. The invention is not limited to the exact details shown and described, for variations obvious to one skilled in the art will be included within the invention defined by the claims. The complete disclosures of all patents, patent documents, and publications listed herein are incorporated by reference, as if each were individually incorporated by reference.
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