Semiconductor device with silicon carbide channel
a silicon carbide channel and semiconductor technology, applied in semiconductor devices, chemical vapor deposition coatings, coatings, etc., can solve problems such as deterioration of semiconductor devices, and achieve the effect of improving the characteristics of semiconductor devices
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embodiment 1
[0057]FIG. 1 is a sectional view showing a constitution of a MOSFET according to an embodiment 1 of the present invention. Referring to FIG. 1, a MOSFET 30 as a semiconductor device includes a SiC substrate 10 and a p-type SiC film 11 as a semiconductor film made of SiC. The SiC crystal constituting SiC substrate 10 is formed in such a manner that, for example, (0001) face is inclined by 8° relative to the [11-20] direction (that is, has an off angle of 8°), or has an off angle of 8° relative to the [1-100] direction. SiC film 11 is a film homoepitaxially grown on SiC substrate 10, to succeed the crystal structure of SiC substrate 10, SiC film 11 has a facet forming layer 11a on its surface. Note that in FIG. 1, a boundary line is drawn between SiC film 11 and facet forming layer 11a for convenience of explanation, but such boundary line does not exist actually and the facet is formed on the surface of SiC film 11.
[0058]FIG. 2 is an enlarged perspective view showing the facet formin...
embodiment 2
[0093]In the present embodiment, a manufacturing method of MOSFET 30 shown in FIG. 1 other than the embodiment 1 is explained.
[0094]In the manufacturing method according to the present embodiment, first, manufacturing steps similar to those in embodiment 1 shown FIG. 4 to FIG. 5 are performed. Therefore, the explanation of the steps is omitted.
[0095]Next, referring to FIG. 13, coating film 20 made of Si is formed so as to cover SiC film 11. Thereby, a state where Si is supplied on the surface of SiC film 11 is effected.
[0096]Next, referring to FIG. 14, SiC film 11 is heat-treated at a temperature of, for example, about 1500° C. This heat treatment enables impurities to be activated, and n-type contact areas 12a and 12b to be formed. Further, this heat treatment enables the steps on the surface of SiC film 11 to gather each other, so as to make a number of bunching steps formed. Further, similarly to the case of the embodiment 1, SiC film 11 is enabled to grow (reconstructed) in the ...
embodiment 3
[0100]In embodiment 1, there is shown a case where facet forming layer 11a serving as channel 16 is constituted by a plurality of facets 1, as shown in FIG. 1. However, according to the present invention, in addition to such case, for example, there may be a case where facet forming layer 11a serving as channel 16 of a MOSFET 30a is constituted by one facet 1, as shown in FIG. 15. In this case, gate electrode 18 and channel 16 are formed in parallel to crystal face 3 constituting facet 1, and channel 16 is included in crystal face 3. Thereby, recessions and projections are extremely reduced in crystal face 3 constituting facet 1, which makes it possible to significantly reduce the interface state density and to improve the carrier mobility.
[0101]Note that in the present embodiment, there is shown a case where the channel is extended within crystal face 3 in the direction parallel to the paper surface (direction indicated by the arrow of broken line in FIG. 2). However, in the presen...
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Abstract
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