Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

High power and high linearity cascode amplifier

Active Publication Date: 2016-01-05
MACOM TECH SOLUTIONS HLDG INC
View PDF7 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The present invention provides an amplifier that has several technical advantages. It can produce high power output and has a linear response over a wide range of frequencies. It is made using HBT and GaN transistors and has high power and high voltage characteristics. It also provides linear and / or gain characteristics of both HBT and GaN implementations. Additionally, it can amplify both current and voltage on the same package, improve broadband performance by raising input impedance, and provide a combination of low voltage driver stage with a high voltage output device. Furthermore, it can be implemented on an integrated circuit package.

Problems solved by technology

GaN solutions do not offer a linear response over a wide range of frequencies.
HBT devices have limited power levels.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • High power and high linearity cascode amplifier
  • High power and high linearity cascode amplifier
  • High power and high linearity cascode amplifier

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0020]In an example embodiment, one transistor type, such as bipolar transistors (or heterojunction bipolar transistors), may be used to implement an input stage. In another example, the input stage may be implemented using a Darlington configuration. In one example, another transistor type, such as a high breakdown voltage FET, may be used to implement an output stage. In general, the high breakdown voltage FET may include pHEMT (pseudomorphic high electron mobility transistor) and / or HFET (heterostructure field-effect transistor) technology capable of providing high breakdown voltages. In one example, a GaN HEMT (high electron mobility transistor) may be used to implement the output stage. In general, HBT devices may have a maximum operating voltage of 5V allowing signal swings of approximately 10V. In general, a high breakdown voltage may be considered to be a breakdown voltage of greater than 10V. For example, GaN devices offer breakdown and operating voltages greater than 50V. ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

An apparatus having a first circuit and a second circuit. The first circuit may be configured to generate an output signal in response to an intermediate signal. The first circuit may be implemented using a first transistor type. The second circuit may be configured to generate the intermediate signal in response to (i) an input signal and (ii) a feedback of the output signal. The second circuit may be implemented using a second transistor type. The output signal is an amplified version of the input signal while maintaining linearity.

Description

FIELD OF THE INVENTION[0001]The present invention relates to amplifiers generally and, more particularly, to a method and / or apparatus for implementing a high power and high linearity cascode amplifier.BACKGROUND OF THE INVENTION[0002]Conventional Gallium Nitride (GaN) amplifier solutions offer high power performance, especially by enabling performance at high voltage. GaN solutions do not offer a linear response over a wide range of frequencies. Conventional heterojunction bipolar transistor (HBT) devices provide a linear response over a wide range of frequencies, but only operate with limited supply voltages. HBT devices have limited power levels. In the conventional approaches, an all FET (field-effect transistor) common source drain with a FET common gate configuration can be used to implement an amplifier.[0003]It would be desirable to provide a power amplifier with improved linearity implemented using GaN devices.SUMMARY OF THE INVENTION[0004]The present invention concerns an ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H03F3/16H03F3/26H03F3/21H03F1/22
CPCH03F3/26H03F3/21H03F1/22H03F1/226H03F1/34H03F1/342H03F2200/06H03F2200/09H03F2200/144H03F2200/534H03F2200/537H03F2200/541H03F1/223H03F1/56H03F3/16H03F2200/129
Inventor MCNAMARA, BRIAN, J.
Owner MACOM TECH SOLUTIONS HLDG INC
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com