High power and high linearity cascode amplifier
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[0020]In an example embodiment, one transistor type, such as bipolar transistors (or heterojunction bipolar transistors), may be used to implement an input stage. In another example, the input stage may be implemented using a Darlington configuration. In one example, another transistor type, such as a high breakdown voltage FET, may be used to implement an output stage. In general, the high breakdown voltage FET may include pHEMT (pseudomorphic high electron mobility transistor) and / or HFET (heterostructure field-effect transistor) technology capable of providing high breakdown voltages. In one example, a GaN HEMT (high electron mobility transistor) may be used to implement the output stage. In general, HBT devices may have a maximum operating voltage of 5V allowing signal swings of approximately 10V. In general, a high breakdown voltage may be considered to be a breakdown voltage of greater than 10V. For example, GaN devices offer breakdown and operating voltages greater than 50V. ...
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