Micromachinery variable capacity with parallel quadrilateral structure

Abstract

The present invention discloses a micro mechanically variable capacitor of parallelogram structure in the field of micro electronic component. The structure body of the capacitor is formed of an upper electrode plate, a lower electrode plate, a left supporting beam and a right supporting beam on a silicon substrate. Compared with the conventional capacitor whose left and right supporting beams are of vertical type, the variable capacitor of parallelogram structure have the greater variation of the capacitance and the smaller maximum stress than those of the conventional capacitor of parallel plate, so that the structure stability and the operating life of the variable capacitor can be increased, the operating voltage of the variable capacitor and the bias voltage required to realize a certain value of deformation can be decreased, and the chip area required for the capacitor is small.

Description

technical field [0001] The invention belongs to the field of microelectronic components, in particular to a micromechanical variable capacitor with a parallelogram structure. Background technique [0002] In "Aleksander Decand Ken Suyama, "Micromachined Electro-Mechanically Tunable Capacitors and Their Application to RF IC's", IEEE TRANSACTIONSON MICROWAVE THEORY AND TECHNIQUES, VOL.46, NO.12, DECEMBER 1998" discloses the micromechanical Tunable Capacitors of two structures Variable capacitance: a two-plate structure variable capacitor with the lower plate fixed and the upper plate suspended under the spring; a three-plate structure variable capacitor composed of two capacitors connected in series. The adjustment range of the variable capacitance of the two-electrode plate structure is 1.5:1; the adjustment range of the variable capacitance of the three-electrode plate structure is 1.87:1. The adjustment range of the capacitance value of the former is small; the manufacturi...

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Problems solved by technology

The adjustment range of the capacitance value of the former is small; the production process of the latter is relatively complicated, and the maximum stress value of the two is relatively large during operation.

[0003] In "Jun Zou, Chang Liu, Jose Schutt-Aine, Jinghong Chen, and Sung-MoKang, "Development of a Wide Tuning Range MEMS Tunable Capacitor for Wireless Communication Systems", IEEE IEDM 00-403, 2000" the variable capacitor The control plate and the capacitor plate are separated, and the distance between the two plates is different, which realizes a large capacitance value adjustment range of 1.70:1; but the disadvantage is that the chip area occupied by the capacitor is large

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