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Integrated high-voltage P-type LDMOS transistor structure and production thereof

A transistor and high-voltage technology, applied in the field of structural design and preparation of high-voltage P-type LDMOS transistors, to achieve the effects of increasing breakdown voltage, increasing radius of curvature, and reducing concentration gradient

Inactive Publication Date: 2008-02-20
XIDIAN UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] The purpose of the present invention is to provide an integratable high-voltage P-type LDMOS transistor structure and its preparation method to solve the integration problem of LDMOS transistors

Method used

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  • Integrated high-voltage P-type LDMOS transistor structure and production thereof
  • Integrated high-voltage P-type LDMOS transistor structure and production thereof
  • Integrated high-voltage P-type LDMOS transistor structure and production thereof

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Embodiment Construction

[0021] The present invention is described in further detail below in conjunction with accompanying drawing:

[0022] Referring to Fig. 1, the structure of the present invention includes a P-type substrate 1, an N-type epitaxy 3, a buried layer 2 is provided between the P-type substrate and the N-type epitaxy, and a drain region and a source region are arranged on the N-type epitaxy 3 , the drain region is provided with a low-concentration P-type region 5 on the N epitaxy, the inside of the low-concentration P-type region 5 is provided with a heavily doped P-type layer 7D, and both sides are provided with a P-type drift region 4D of the drain region; the source A heavily doped N-type region 6 is arranged in the middle of the region, and a heavily doped P-type region 7S is arranged on both sides, and a P-type drift region 4S of a source region is arranged on both sides of the heavily doped P-type region; A field oxide layer 9 is arranged between the drain regions as a thick gate...

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Abstract

An integratable high-voltage P-type LDMOS transistor structure for high-voltage power IC with high break-through voltage is composed of P-type substrate, N-type epitaxial layer, a burried layer between said substrate and epitaxial layer, a field oxidized layer as thick grid oxidized layer between source and drain on epitaxial layer, N-type polysilicon grid and its extended part as field plate, low-concentration P-type region containing Pt region with two P-type drift regions at its both sides, and Nt contact region with Pt regions at its both sides and having two P-type drift region. Its preparing process is also disclosed.

Description

technical field [0001] The invention relates to a structural design and preparation method of a high-voltage P-type LDMOS transistor applied to an integrated epitaxial process of a high-voltage power integrated circuit. Background technique [0002] At present, high-voltage power integrated circuit technology has been widely used and developed, such as in automatic test equipment, telephone central office switches, linear power integrated circuits, motor control, power control, integrated high-voltage operational amplifiers, flat panel display drivers and other fields. [0003] In high-voltage power integrated circuits, high-voltage power devices and low-voltage digital or analog circuits are generally integrated on the same chip, so the high-voltage devices are required to be compatible in the manufacturing process, and it is hoped that the high-voltage devices do not occupy too much area. The performance meets the requirements of the circuit. Therefore, the design of the h...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/78H01L29/02H01L27/00H01L21/336H01L21/822
Inventor 庄奕琪李小明张丽邓永洪
Owner XIDIAN UNIV
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