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Portion lacked SOI MOS element

A technology of oxide semiconductors and metals, which is applied in the direction of semiconductor devices, electrical components, electric solid-state devices, etc., and can solve the problems of sacrificing the operating efficiency of SOI components and the imperfection of conventional technologies.

Active Publication Date: 2008-09-03
FUJIAN JINHUA INTEGRATED CIRCUIT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Furthermore, since the purpose of the SOI devices disclosed in the above prior art is to eliminate the so-called floating body effect, it is inevitable to sacrifice the operating performance of the SOI device.
As can be seen from this, the known technology is still not perfect and there is a need for further improvement

Method used

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  • Portion lacked SOI MOS element
  • Portion lacked SOI MOS element
  • Portion lacked SOI MOS element

Examples

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Embodiment Construction

[0029] The present invention relates to a structure of an SOI metal oxide semiconductor field effect transistor, especially using a direct tunneling mechanism to form a structure with high performance, high current-driving capability, and high twist-trigger voltage A novel SOI metal-oxide-semiconductor field-effect transistor structure.

[0030] Please refer to the first preferred embodiment of the present invention Figure 1 to Figure 4 ,in figure 1 It is a top view layout diagram of a partially depleted SOI metal oxide semiconductor field effect transistor element (PD SOI MOSFET device) according to a preferred embodiment of the present invention; figure 2 , image 3 and Figure 4 respectively figure 1 The cross-sectional schematic diagram of the partially depleted SOI MOSFET device seen along the tangent line AA, the tangent line BB and the tangent line CC in FIG. Figure 1 to Figure 4 The shown first preferred embodiment of the present invention is illustrated by dis...

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PUM

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Abstract

A partial vacant SOI mos element includes a first conductive well in a film master layer isolated from the SOI base plate which contains a film master layer, a support base plate and a deep buried oxide layer between said layer and said support plate, a gate dielectric layer set on the surface of said first conductive well, a poly-silicon gate set on said dielectric layer having a first gate block of a first conductive type overlapped with an extended well zone extending from the first conductive well and a second gate block of a second conductive type crossing over said first conductive well so as to form a tunnel through connection configuration between the first gate block and said extended well zone, a second conductive drain and a source zone set at the first well at both sides of said second gate block separately.

Description

technical field [0001] The present invention relates to a kind of SOI semiconductor element, especially a kind of high-efficiency partially depleted (Partially-Depleted) SOI Metal-Oxide-Semiconductor (Metal-Oxide-Semiconductor, MOS) element using direct tunneling (directtunneling) mechanism and its Production Method. According to a preferred embodiment of the present invention, the high-efficiency partially depleted SOI metal-oxide-semiconductor device has higher current-driving capability. Background technique [0002] In today's metal oxide semiconductor (MOS) devices, basically only the top silicon single crystal of about several hundred nanometers (nm) is used to make the device active layer (Active Layer) for electron transmission; and the device layer The rest of the underlying silicon acts as a mechanical support. Such a structure is likely to cause parasitic effects between the device and the substrate. In addition, it is very difficult to use a silicon substrate w...

Claims

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Application Information

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IPC IPC(8): H01L27/12H01L29/78
Inventor 陈孝贤黄吕祥唐天浩
Owner FUJIAN JINHUA INTEGRATED CIRCUIT CO LTD