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Semiconductor end-electrode structure and its making method

A manufacturing method and terminal electrode technology, which are used in semiconductor/solid-state device manufacturing, semiconductor devices, and semiconductor/solid-state device components, etc., can solve problems such as low hardness of gold bumps, shorten annealing time, improve hardness, and improve brightness Effect

Inactive Publication Date: 2008-09-17
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In view of this, the object of the present invention is to provide a semiconductor terminal electrode structure capable of improving the hardness of gold bumps and a manufacturing method thereof, without sacrificing the purity of gold while improving the hardness of gold bumps, so as to solve the problem of gold bumps in the prior art. low hardness problem

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  • Semiconductor end-electrode structure and its making method
  • Semiconductor end-electrode structure and its making method
  • Semiconductor end-electrode structure and its making method

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Embodiment Construction

[0035] The specific embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0036] The semiconductor terminal electrode structure and the manufacturing method thereof of the present invention improve the hardness of the gold bump without sacrificing the purity of the gold. In the preferred embodiment of the present invention, annealing is stopped at 145°C instead of annealing at room temperature, a small amount of metal thallium is added during the process of electroplating gold bumps, and its concentration is controlled within the range of 18-28ppm. A barrier layer composed of titanium-tungsten alloy is formed on the disk, and an implantation layer composed of gold is formed on the barrier layer, and gold bumps containing a very small amount of thallium are electroplated on the implantation layer.

[0037] figure 1 It is a schematic diagram of an embodiment of the semiconductor terminal electrode structure of th...

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Abstract

The provided semiconductor end electrode structure comprises: from bottom to top, a substrate, a joint tray on substrate surface, a pattern passivated layer, a barrier layer, an implantation layer, and a metal bulge. The relative manufacture method is simple just to process as former structure hierarchy. This invention can increase hardness for the metal bulge.

Description

technical field [0001] The invention relates to semiconductor device manufacturing technology, in particular to semiconductor terminals for low-profile tape carrier packaging (TCP), thin film chip packaging (COF), glass fiber packaging (COG) and flip chip (Flip Chip) in microelectronic circuits Electrode structure and its fabrication method. Background technique [0002] With the rapid development of the semiconductor device manufacturing industry, the semiconductor device has a deep submicron structure, and a semiconductor integrated circuit (IC) contains a huge number of semiconductor elements. In such large-scale integrated circuits, high-performance, high-density connections between components are not only interconnected in a single interconnect layer, but also interconnected between multiple layers. Microelectronic integrated circuits on semiconductor wafers typically include connection structures at the top of the devices and at the bottom of the interconnects between...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/485H01L21/283
CPCH01L2224/13
Inventor 王津洲李润领
Owner SEMICON MFG INT (SHANGHAI) CORP
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