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Component for vacuum film deposition system, vacuum film deposition system using the same and sighting board device

By forming a coating structure with specific surface roughness and low hardness on the parts of the vacuum film forming device, the dust problem caused by differences in thermal expansion rates and stress is solved, the quality of the finished product and the life of the device are improved, and the cost of film formation is reduced.

Inactive Publication Date: 2009-02-11
KK TOSHIBA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Cleaning and exchanging parts reduces the effective part time ratio of the unit, resulting in higher film formation costs

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0095] (Example 1, Comparative Example 1)

[0096] First, an Al sprayed film with a thickness of 250 μm and a Ti sprayed film with a thickness of 100 μm were sequentially formed on the surface of a SUS 304 base material by plasma spraying method to obtain Figure 7 The grounded shield plate 13 , the upper shield plate 14 , the lower shield plate 15 and the pressure ring 17 of the sputtering apparatus are shown. A magnetron sputtering apparatus was constructed using these components.

[0097] The Al spraying is carried out under conditions of a current of 500 A and a voltage of 80 V using an Al spraying raw material having a powder average particle size of 52 μm. The Ti spraying raw material with a powder average particle size of 65 μm was used for the Ti spraying, and it was carried out under the conditions of a current of 500 A and a voltage of 65 V. The surrounding environment during spraying is Ar and H respectively 2 In a mixed environment, while supplying Ar at 73L / min...

Embodiment 2

[0103] (Example 2, Comparative Example 2)

[0104] As in the above-mentioned Example 1, a magnetron sputtering apparatus was constituted by using each member of the laminated film of the Al sprayed film and the Ti sprayed film shown in Table 2, respectively. The surface roughness of the outermost surface of the sprayed coating and the hardness of each sprayed coating are shown in Table 2 for details. The surface roughness of the spray coating is adjusted according to the particle size of the powder. The hardness of the sprayed coating was adjusted according to the annealing conditions.

[0105]Using these magnetron sputtering apparatuses, a Ti / TiN thin film was formed on an 8-inch sheet in the same manner as in Example 1, and the number of particles with a diameter of 0.2 μm or more on the Ti / TiN thin film was measured. Such a thin film was formed continuously, and the service life was investigated in the number of batches until the particles were increased until peeling occ...

Embodiment 3

[0108] (Example 3, Comparative Example 3)

[0109] First, various Ti spraying raw materials with different particle size distributions in the range of powder particle size 40-150 μm are prepared. Using these Ti sputtering raw materials, in Figure 7 Ti sputtering films with a thickness of 200 μm were formed on the ground shield plate 13, upper anti-reflection plate 14, lower shield plate 15, and pressure ring 17 (substrate made of SUS304) of the sputtering device shown. Next, after cleaning the Ti sprayed surface, heat treatment is carried out under the condition of 300-500°C×3hr in vacuum. The surface roughness of each Ti spray coating is shown in Table 3.

[0110] Next, as in Example 1, these components were installed in a magnetron sputtering apparatus, Ti / TiN thin films were formed on 8-inch wafers, and the number of particles with a diameter of 0.2 μm or more on the Ti / TiN thin films was measured. This thin film was continuously formed, and the average number of partic...

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Abstract

A component for a vacuum deposition apparatus comprises a component body and a spray deposit formed on a surface of a component body. A spray deposit has surface roughness in which a mean spacing S of tops of local peak of profile is in the range from 50 to 150 mum, and distances to a bottom of profile valley line Rv and to a top of profile peak line are in the ranges from 20 to 70 mum, respectively. Furthermore, a spray deposit has a low hardness coat selected from an Al base spray deposit of Hv 30 (Vickers hardness) or less, a Cu base spray deposit of Hv 100 or less, a Ni base spray deposit of Hv 200 or less, a Ti base spray deposit of Hv 300 or less, a Mo base spray deposit of Hv 300 or less and a W base spray deposit of Hv 500 or less. Such component for a vacuum deposition apparatus may suppress, with stability and effectiveness, peeling of deposition material adhering on a component during deposition. In addition, the number of apparatus cleaning and of exchange of components may be largely reduced. A target comprises a similar spray deposit. A vacuum deposition apparatus is one in which above component for a vacuum deposition apparatus is applied in a holder of a sample to be deposited, a deposition material source holder, a preventive component and so on.

Description

[0001] This application is the application number 00804326.4 (PCT / JP00 / 09379), the application date is December 28, 2000, and the title is "parts for vacuum film-forming device and vacuum film-forming device using the same and its target device" Divisional application of Chinese invention patent application. technical field [0002] The present invention relates to a component for a vacuum film-forming device used in a vacuum film-forming device such as a sputtering device and a CVD device, a vacuum film-forming device using the same, and a target device for a vacuum film-forming device and the like. Background technique [0003] In semiconductor elements, liquid crystal elements, and the like, various wirings, electrodes, and the like are formed by film-forming methods such as sputtering and CVD. Specifically, conductive metal thin films such as Al, Ti, Mo, W, Mo-W alloys, etc. are formed by sputtering and CVD methods on film-forming substrates such as semiconductor substra...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/34C23C14/00C23C16/44C23C4/06H01L21/205H01L21/31H01L21/203H01L21/285C23C4/00C23C4/02C23C4/08C23C4/18C23C14/56
CPCC23C4/18C23C14/564C23C4/00C23C16/4404C23C4/02H01J37/32559H01J37/32477C23C4/08C23C14/00
Owner KK TOSHIBA
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