Double phosphorescent dye co-doped white light organic electroluminescent device and method for fabricating the same
A technology for electroluminescent devices and phosphorescent dyes, which is applied in the fields of electro-solid devices, chemical instruments and methods, semiconductor/solid-state device manufacturing, etc., to achieve the effect of ensuring spectral stability
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Embodiment 1
[0030] The ITO on the ITO glass was first photoetched into electrodes with a width of 4 mm and a length of 30 mm, then cleaned, dried with nitrogen, and treated with oxygen plasma for 2 minutes. In a vacuum of 1 to 5 x 10 -4 Pa's coating system, sequentially vapor-deposit V on the ITO electrode 2 o 5 Vanadium pentoxide hole injection layer, NPB hole transport layer, TCTA electron blocking layer, FIrpic and (fbi) 2 Ir(acac) is co-doped in mCP to form a light-emitting layer, a TAZ electron transport layer, and a composite cathode composed of LiF and metal Al. The intersecting part of the two electrodes forms the light-emitting area of the device, and the area of the light-emitting area is 16 square millimeters. The thickness of LiF in the metal cathode layer is 1 nm, the thickness of Al is 100 nm, and the metal oxide V 2 o 5 The thickness of NPB, TCTA, mCP, and TAZ layer is 80, 5, 20, 40 nanometers and the total thickness of these layers of organic matter is 145 nanomete...
Embodiment 2
[0032] The ITO on the ITO glass was first photoetched into electrodes with a width of 4 mm and a length of 30 mm, then cleaned, dried with nitrogen, and treated with oxygen plasma for 2 minutes. In a vacuum of 1 to 5 x 10 -4 Pa's coating system, sequentially vapor-deposit V on the ITO electrode 2 o 5 Vanadium pentoxide hole injection layer, NPB hole transport layer, TCTA electron blocking layer, FIrpic and (fbi) 2 Ir(acac) is co-doped in mCP to form a light-emitting layer, a TAZ electron transport layer, and a composite cathode composed of LiF and metal Al. The intersecting part of the two electrodes forms the light-emitting area of the device, and the area of the light-emitting area is 16 square millimeters. The thickness of LiF in the metal cathode layer is 1 nm, the thickness of Al is 200 nm, and the metal oxide V 2 o 5 The thickness of the NPB, TCTA, mCP, and TAZ layers is 80, 7.5, 20, and 40 nanometers, respectively, and the total thickness of these layers of orga...
Embodiment 3
[0034] The ITO on the ITO glass was first photoetched into electrodes with a width of 4 mm and a length of 30 mm, then cleaned, dried with nitrogen, and treated with oxygen plasma for 2 minutes. In a vacuum of 1 to 5 x 10 -4 In Pa's coating system, MoO is sequentially deposited on the ITO electrode 3 Molybdenum trioxide hole injection layer, NPB hole transport layer, TCTA electron blocking layer, FIrpic and (fbi) 2 Ir(acac) is co-doped in mCP to form a light-emitting layer, a TAZ electron transport layer, and a composite cathode composed of LiF and metal Al. The intersecting part of the two electrodes forms the light-emitting area of the device, and the area of the light-emitting area is 16 square millimeters. The thickness of LiF in the metal cathode layer is 1 nm, the thickness of Al is 200 nm, and the metal oxide MoO 5 The thickness of the NPB, TCTA, mCP, and TAZ layers is 60, 10, 20, and 40 nm, respectively, and the total thickness of these layers of organic matter i...
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