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Power gate control circuit for restraining power/grounding line network voltage jitter

A technology of power gating and voltage jitter, applied in the direction of electrical components, electronic switches, pulse technology, etc., can solve the problems of power and ground network voltage jitter, high complexity of control circuits, complicated control steps, etc., and achieve simple structure, Improving the effect of robust and smooth inrush current

Inactive Publication Date: 2009-05-27
TSINGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This technology can greatly reduce leakage power consumption, but there are also some shortcomings. In the article "Understanding and minimizing ground bounce during mode transition of power gating structures" by S.Kim et al., a shortcoming of power gating technology is mentioned: using The circuit of power gating technology, when switching from sleep mode to normal operation mode, will cause the problem of voltage jitter of power supply and ground network, because in the sleep state, the capacitor in the circuit stores a large amount of charge, and when switching to normal operation When in power mode, these charges are poured from the sleep transistor to the ground network at once, forming a large inrush current. Due to the parasitic distributed resistance in the power supply and the bottom line network, the inrush current will further cause voltage jitter
However, the disadvantage of such a circuit is that the complexity of the control circuit is relatively high
The control steps are more complicated

Method used

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  • Power gate control circuit for restraining power/grounding line network voltage jitter
  • Power gate control circuit for restraining power/grounding line network voltage jitter
  • Power gate control circuit for restraining power/grounding line network voltage jitter

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Embodiment Construction

[0028] When this circuit is applied in a specific power gating circuit such as figure 2 Shown: During normal operation and during sleep state, the control transistor M C The input signal cntl is 0, M C Turn off; the control signal of the transmission gate TG makes it open, and the Sleep signal can directly control the sleep transistor NMOS ST. When switching from sleep mode to active mode, the timing of the control signals is as followsfigure 2 As shown, it can be seen that it is divided into two phases: the relaxation phase and the fully open phase. During the relaxation phase, TG is turned off, and the gate of the sleep transistor NMOS ST is suspended. At the same time, cntl controls M C make it open so that NMOS ST and M C form a diode connection, such as Figure 4 (a), store in circuit CT 1 The charge in the capacitor is released smoothly; in the fully open stage, cntl control makes M C Turn off, TG is turned on at the same time, the Sleep signal directly passes thro...

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Abstract

The power gate circuit for inhibiting power / ground network voltage jittering applies a controlled diode to switch circuit from sleep mode to normal work mode with smooth current. This invention reduces instant peak current on switching moment, and decreases voltage fluctuation.

Description

technical field [0001] The application field of "Power Gating Circuit for Suppressing Power / Ground Network Voltage Jitter" is the design of low-power large-scale integrated circuits. The proposed circuit is suitable for fast mode (sleeping, working, waiting) switching of integrated circuits. While increasing the switching speed, it can greatly reduce the interference of the instantaneous inrush current on adjacent circuits during switching, and effectively suppress Leakage current in active mode. Background technique [0002] With the gradual reduction of the feature size of the CMOS process, the leakage problem in the integrated circuit becomes more and more serious. Compared with the old technology of the previous generation, the leakage power consumption of each new generation technology increases by about 30 times. For a CMOS transistor, the leakage current in the subthreshold region between the drain and source of the transistor dominates, and its expression is as fol...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H03K17/00H03K17/16H03K17/04
Inventor 罗嵘何苦汪玉杨华中
Owner TSINGHUA UNIV