Inverse baking deposition structure in chemical vapor deposition equipment for metal organic matter

Abstract

For metal organic chemical vapor deposition (MOCVD) equipment, especially production metal organic chemical vapor deposition equipment, during the process of baking the graphite base after growing the material, the deposits in the reaction chamber, especially the deposits on the graphite base, are heated When the evaporation rises to the ceiling of the reaction chamber, the graphite deposit will be cooled and deposited on the ceiling again due to the temperature difference. Deposits on these ceilings have the detrimental effect of reducing epiwafer quality, prolonging the cleaning and downtime required for MOCVD equipment, and wasting raw materials. The invention provides an anti-baking deposition structure, which can effectively avoid the reaction chamber ceiling deposition caused by baking the graphite base. The invention reduces the deposition of raw materials on the ceiling of the reaction chamber, reduces the loss of raw materials, reduces the downtime of equipment, and improves the use efficiency of equipment.

Description

technical field [0001] The invention relates to the field of semiconductor equipment manufacturing, in particular to the anti-baking deposition structure in MOCVD equipment. Background technique [0002] Metal-organic chemical vapor deposition (MOCVD) was first proposed in the 1960s, developed in the 1970s to 1980s, and has become the core growth technology for the preparation of optoelectronic materials such as gallium arsenide and indium phosphide in the 1990s. At present, it has been widely used in the production of optoelectronic materials and devices such as gallium arsenide and indium phosphide. At the same time, metal-organic chemical vapor deposition (MOCVD) is the mainstream method for preparing GaN light-emitting diodes and laser diode epitaxial wafers. From the perspective of the main indicators such as the performance of the grown GaN epitaxial wafers and devices, and production costs, there is no other method. can be compared with it. [0003] The principle of...

AI Technical Summary

Problems solved by technology

These deposits have the following adverse effects: (i) the deposits 2 on the ceiling may fall off on the substrate 3 at any time, reducing the quality of the material; Downtime reduces equipment usage time; (iii) Accelerates the deposition of raw materials on the ceiling and consumes raw materials ineffectively

It is generally difficult to deposit raw materials directly on the ceiling of the reaction chamber, but once a layer of sediment grows on the ceiling of the reaction chamber, it is easy to grow more and thicker deposits on the ceiling in the future

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