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Method for making opening and contact window

A manufacturing method and dielectric layer technology, which can be used in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as cost increase, and achieve the effect of suppressing outgassing.

Active Publication Date: 2009-08-12
UNITED MICROELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, in addition to increasing costs, this approach can also lead to defects due to stress

Method used

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  • Method for making opening and contact window
  • Method for making opening and contact window
  • Method for making opening and contact window

Examples

Experimental program
Comparison scheme
Effect test

no. 1 example

[0041] Figure 2A to Figure 2C is a cross-sectional view showing the manufacturing process of an opening according to the first preferred embodiment of the present invention.

[0042] First, please refer to Figure 2A , forming a dielectric layer 210 on a conductive layer 200 . Wherein, the material of the conductor layer 200 is, for example, copper, which is formed on a semiconductor substrate (not shown), and is used to electrically connect with other components on the substrate. The material of the dielectric layer 210 is, for example, a low dielectric constant dielectric material or fluorine-containing silicate glass, and the formation method is, for example, chemical vapor deposition. Next, a patterned mask layer 220 is formed on the dielectric layer 210, and the patterned mask layer 220 exposes a portion of the dielectric layer 210 where trenches are to be formed. The material of the patterned mask layer 220 is, for example, silicon nitride, and the formation method i...

no. 2 example

[0047] Figure 3A to Figure 3B It is a cross-sectional view showing the manufacturing process of an opening according to the second preferred embodiment of the present invention.

[0048] First, please refer to Figure 3A , forming a dielectric layer 310 with a contact window opening 314 on a conductive layer 300 , and the contact window opening 314 exposes the surface of the conductive layer 300 . Wherein, the material of the conductor layer 300 is, for example, copper, which is formed on a semiconductor substrate (not shown), and is used to electrically connect with other components on the substrate. In addition, the method of forming a dielectric layer 310 with a contact window opening 314 is, for example, to first form a dielectric material layer (not shown) by chemical vapor deposition, and its material is, for example, a low dielectric constant dielectric material or The fluorine-containing silicon glass is formed by performing a photolithography process and an etching...

no. 3 example

[0053] Figure 4A to Figure 4B It is a cross-sectional view showing the manufacturing process of an opening according to the third preferred embodiment of the present invention.

[0054] First, please refer to Figure 4A , forming a dielectric layer 410 with a trench 416 on a conductive layer 400 . Wherein, the material of the conductor layer 400 is, for example, copper, which is formed on a semiconductor substrate (not shown), and is used for electrically connecting with other components on the substrate. In addition, the method of forming a dielectric layer 410 with a trench 416, for example, is to first form a dielectric material layer (not shown) by chemical vapor deposition, the material of which is, for example, a low dielectric constant dielectric material or containing Fluorosilicate glass is formed by performing a photolithography process and an etching process.

[0055] Next, please continue to refer to Figure 4A , performing a treatment step on the exposed surf...

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Abstract

A method of manufacturing an opening. In the manufacturing process of the opening, before forming a photoresist layer on the dielectric layer to define the opening pattern, a treatment step is performed on the exposed surface of the dielectric layer to form a film layer, which can prevent the Escaping and reacting with the photoresist layer, causing the problem of incomplete development. On the other hand, in the process of forming the contact window, before forming a barrier layer on the surface of the contact window opening, a treatment step is performed on the exposed dielectric layer surface to form a film layer, which can prevent the Escape and react with the barrier layer, and then cause defects in the barrier layer.

Description

technical field [0001] The invention relates to a method for manufacturing an opening and a contact window, in particular to a method for manufacturing an opening and a contact window that can effectively suppress outgassing of dielectric materials. Background technique [0002] When the development of VLSI (Ultra Large Scale Integration) reaches below 0.13μm, in order to improve the execution speed of the chip, it is necessary to effectively overcome the time delay caused by impedance (impedance) and capacitance (capacitance). It has become the trend of the times to use a dielectric material with a constant electric constant and copper as an interconnection structure. However, due to the poor physical properties of low dielectric constant dielectric materials, such as softness, poor thermal stability, difficult processing, and the easy loss of components (that is, outgassing), etc., the copper / low dielectric constant material process It is difficult to maintain good defect...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/311H01L21/768H01L21/28
Inventor 郑懿芳周孝邦
Owner UNITED MICROELECTRONICS CORP
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