A multi-bit programmable non-volatile memory unit, array and the corresponding manufacturing method

Abstract

The invention discloses a multi-bit programmable non-volatile memory unit, an array and a manufacturing method thereof, comprising: a word line, a bit line, a source line, and a plurality of memory units located between the word line, the bit line and the source line ; wherein, the gate of the transistor in the memory cell is connected to the word line; the source of the transistor in the memory cell is connected to the source line in series with the capacitor; the drain of the transistor in the memory cell is connected to the bit line connected; the capacitor is formed by sequentially connecting the metal layer, the contact hole, the barrier layer and the polysilicon in the passive area; the capacitor produces a variety of predetermined resistance values ​​under the action of different predetermined voltages and after different predetermined action times; The various predetermined resistance values ​​are used to characterize various storage states of the memory cell. Through the present invention, the ability of single memory unit to store data and the storage stability of the memory are improved, and the area of ​​the memory is further reduced, thereby being more beneficial to the application of large-scale integrated circuits.

Description

technical field [0001] The invention mainly relates to a semiconductor storage device, in particular to a multi-bit programmable non-volatile memory unit, an array and a manufacturing method thereof. Background technique [0002] The manufacture of a System On Chip (SOC, System On Chip) is mainly based on a logic process, and designers often need to integrate a large number of non-volatile memory units inside the SOC during the R&D and design process of the SOC. According to the different uses of the designed SOC, the designer selects the appropriate type and function of the non-volatile storage unit as the internal storage unit of the SOC. [0003] Currently, nonvolatile storage units include read-only nonvolatile storage units, programmable read-only nonvolatile storage units, programmable erasable read-only nonvolatile storage units, and the like. Among them, the existing programmable non-volatile memory unit has the following deficiencies in its structure and design met...

AI Technical Summary

Problems solved by technology

Therefore, the use of programmable non-volatile memory cells based on fuse or anti-fuse manufacturing technology not only increases the cost of SOC, but also greatly reduces the cost of logic devices due to the special process and special materials used in the manufacturing process. reliability

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