Flexible copper-indium-gallium-selenium film solar cell preparation method
A thin-film solar cell and copper indium gallium selenide technology, which is applied in the field of solar cells, can solve problems such as limiting the application field of copper indium gallium selenide thin film solar cells, affecting the performance of copper indium gallium selenide thin film solar cells, and easy peeling of Mo bottom electrodes , to achieve the effect of easy roll-to-roll large-area continuous production, conducive to large-scale production, and light weight
Inactive Publication Date: 2009-10-14
CHINA ELECTRONIC TECH GRP CORP NO 18 RES INST +1
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Problems solved by technology
Although the copper indium gallium selenide thin film solar cell using glass as the substrate has the advantages of low material cost and relatively mature process technology, but because the glass is a rigid substrate, the application field of copper indium gallium selenide thin film solar cell is limited.
[0004] On the glass substrate, the Mo bottom electrode is generally prepared by magnetron sputtering, but the Mo bottom electrode prepared on the glass is not well bonded to the glass substrate, especially when the temperature of the metal prefabricated layer of the absorbing layer is higher than 550 ° C. During the preparation process, the selenization or vulcanization process of the absorbing layer and the chemical bath method of the buffer layer, the Mo bottom electrode is easy to peel off and burst, which affects the preparation and performance of copper indium gallium selenide thin film solar cells.
Method used
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Embodiment 1
[0019] Refer to attached figure 1 .
[0020] The flexible copper indium gallium selenium thin film solar cell is a multilayer film structure, including a substrate 7, a bottom electrode 6, an absorption layer 5, a buffer layer 4, a window layer 3, an antireflection film 2 and an upper electrode 1, and its substrate has 7 layers It is titanium foil made of flexible metal material, the thickness of the substrate 7 is 10-100 μm, and there is a double-layer film bottom electrode Mo on the substrate 7 .
Embodiment 2
[0022] Flexible copper indium gallium selenide thin film solar cell, the substrate layer is a polyimide film with a thickness of 25 μm, there is a metal Cr with a thickness of 0.3 μm on the substrate, and a bottom electrode Mo is placed on the metal Cr layer. Other structures are with embodiment 1.
Embodiment 3
[0024] Flexible copper indium gallium selenide thin film solar cell, the substrate layer is a stainless steel foil with a thickness of 40 μm, and there is a 2 μm thick Al on the substrate 2 o 3 Transition layer, Al 2 o 3 There is a bottom electrode Mo on the transition layer. Other structures are with embodiment 1.
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Abstract
The invention is a multilayer film structure and comprises: a substrate, a bottom electrode, an absorbing layer, a buffer layer, a window layer, a reflection reducing film and an upper electrode. It features a substrate layer made of flexible metal materials or polymide. The method for preparing the CuIn1-xGaxSe2 thin film solar cell comprises: washing the flexible substrate; placing the substrate into vacuum; after glow processing, depositing 0.6-1.5 um bottom electrode Mo by using magnetron sputtering.
Description
technical field [0001] The invention belongs to the technical field of solar cells, in particular to a method for preparing a flexible copper indium gallium selenium thin film solar cell. Background technique [0002] The existing copper indium gallium selenide thin film solar cell is a new type of solar cell developed in the late 1980s. The typical structure is the following multilayer film structure: substrate / bottom electrode / absorbing layer / buffer layer / window layer / Anti-reflection coating / top electrode. [0003] Copper indium gallium selenide thin film solar cells use glass as the substrate, and the bottom electrode Mo is directly prepared on the glass by sputtering. Although the copper indium gallium selenide thin film solar cell using glass as the substrate has the advantages of low material cost and relatively mature process technology at present, but because the glass is a rigid substrate, the application field of copper indium gallium selenide thin film solar cel...
Claims
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IPC IPC(8): H01L31/042H01L31/02H01L31/18
CPCY02E10/52Y02E10/50Y02P70/50
Inventor 方小红王庆华赵彦民冯金晖杨立
Owner CHINA ELECTRONIC TECH GRP CORP NO 18 RES INST