Indium antimonide Hall element manufacturing method
A technology of Hall element and manufacturing method, which is applied to the manufacture/processing of Hall effect devices, electromagnetic devices, parts of electromagnetic equipment, etc., and can solve the problem of no protection, poor stability of Hall elements, and easy to detect indium antimonide sensing film. Damage and other problems, to achieve the effect of low cost and not easy to damage
Inactive Publication Date: 2009-10-21
KUSN NICERA ELECTRICAL APPLIANCE
View PDF5 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
[0002] The indium antimonide (InSb) Hall element currently on the market usually uses two photolithography, on the surface of the "cross" shaped indium antimonide (InSb) sensing film, and then photoetches the gold electrode pattern, in the "cross" shape There is no protection on the surface of the indium antimonide sensing film, such a Hall element has poor stability, and the indium antimonide sensing film is easily damaged
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment
[0009] Embodiment: an indium antimonide Hall element, mainly composed of a nickel-zinc material substrate, a silicon dioxide insulating layer, a "cross"-shaped indium antimonide sensing film 1 and a gold electrode 3, a "cross"-shaped indium antimonide sensing film 1 is covered with a "cross"-shaped liquid resin protective film 2. The size of the "cross"-shaped liquid resin protective film is slightly smaller than that of the "cross"-shaped indium antimonide sensing film, so as to facilitate the "cross"-shaped indium antimonide sensing film The four ends are exposed outside the "cross"-shaped liquid resin protective film and are connected to the gold electrode 3. The width of the "cross" of the "cross"-shaped liquid resin protective film is larger than the "cross" of the "cross"-shaped indium antimonide sensing film The width can better protect the "cross"-shaped indium antimonide sensing film.
[0010] The manufacturing method of the present invention is as follows:
[0011] The r...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
| Property | Measurement | Unit |
|---|---|---|
| diameter | aaaaa | aaaaa |
| thickness | aaaaa | aaaaa |
Login to View More
Abstract
The invention discloses a method for manufacturing an indium antimonide Hall element. The "cross" shaped indium antimonide sensing film is covered with a "cross" shaped liquid resin protective film, and the graphic size of the "ten" shaped liquid resin protective film is slightly smaller than the "cross" shaped liquid resin protective film. Ten"-shaped indium antimonide sensing film pattern size; the main steps of the manufacturing method are: 1) preparing a nickel-zinc material substrate; 2) forming a silicon dioxide insulating layer; 3) vaporizing an indium antimonide sensing film; ""-shaped indium antimonide sensing film; 5) photolithography to form a "ten"-shaped liquid resin protective film; 6) photolithography to form four gold electrode patterns; Layers of Cr and Au form four gold electrodes; 7) Finally, the chip is diced and cut, and the four gold electrodes are connected by gold wire ball bonding for ultra-small packaging, and after electroplating treatment, an indium antimonide high Sensitive Hall element. The manufacturing method is simple and easy, and the cost is low.
Description
Technical field [0001] The invention relates to a method for manufacturing a Hall element. Background technique [0002] The indium antimonide (InSb) Hall elements currently on the market usually use photolithography twice, and then photoetch the gold electrode pattern on the surface of the photoetched "cross"-shaped indium antimonide (InSb) sensing film. There is no protection on the surface of the indium antimonide sensing film, such a Hall element has poor stability, and the indium antimonide sensing film is easily damaged. Summary of the invention [0003] In order to overcome the above-mentioned drawbacks, the present invention provides a manufacturing method of indium antimonide Hall element. The sensing film of indium antimonide Hall element manufactured by this method is not damaged, has stable performance, and the manufacturing method is simple and easy to implement, and the cost is relatively low. low. [0004] The technical problem adopted by the present invention to ...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Patents(China)
IPC IPC(8): H01L43/06H01L43/04H01L43/14G01R33/07H10N52/00H10N52/01H10N52/80
Inventor 西垣诚
Owner KUSN NICERA ELECTRICAL APPLIANCE