Method for forming grid side wall layer

Abstract

A method for forming a gate sidewall layer is disclosed, comprising the steps of: providing a substrate having at least one gate on the surface; forming a first dielectric layer on the substrate; forming a second dielectric layer on the first dielectric layer a dielectric layer; etching the first and second dielectric layers; performing wet etching on the substrate to form a side wall layer. The method for forming the gate sidewall layer of the present invention reduces the thermal budget in the process of manufacturing without increasing the process steps, and improves the sidewall layer that is prone to sinking in the wet etching process, resulting in device performance degradation The problem.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for forming a gate sidewall layer. Background technique [0002] In semiconductor devices, the sidewall spacer of the gate is generally located on the sidewall of the gate, and is composed of a silicon oxide / silicon nitride (ON) dielectric film or a silicon oxide / silicon nitride / silicon oxide (ONO) dielectric film combination made. [0003] Figures 1A to 1E It is a schematic cross-sectional view of a device illustrating a conventional gate sidewall layer forming method. Figure 1A It is a schematic diagram of the device structure after forming the gate, such as Figure 1A As shown, an isolation trench 102 is formed by etching and filling between each device of the substrate, and a gate silicon oxide layer 103 (Gate Oxide) is deposited on the silicon substrate 101; by depositing and etching polysilicon, on the substrate A gate 104 is formed; on the...

AI Technical Summary

Problems solved by technology

This method can realize the deposition of the dielectric layer at a lower temperature, and can also improve the problem of the side wall layer being sunken, but this method needs to increase the steps of light irradiation, which increases the complexity of the process, prolongs the production cycle, and reduces the production cost. Productivity

In addition, whether light irradiation will cause new defects and stress on the irradiated body is still unknown.

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