Assembled structure of large area array infrared detector on cold platform and assembled method thereof
An infrared detector and assembly structure technology, which is applied in the direction of electric solid-state devices, semiconductor devices, semiconductor/solid-state device components, etc., can solve the problems of long cooling time and large heat capacity, and achieve convenient operation, reduce heat radiation, and reduce Effect of parasitic thermal load
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[0044] The specific embodiment of the present invention will be described in further detail below in conjunction with accompanying drawing in embodiment:
[0045] This embodiment is an assembly structure of a 320×240 area array infrared detector on a cold platform, as attached figure 1 As shown, its main implementation method is as follows:
[0046] (1) The photosensitive element 101 and the readout circuit module 102 are directly flip-bonded to form the infrared detector chip 1 . The circuit lead-out terminals 103 of the readout circuit 102 are arranged on both side edges of the readout circuit module 102 .
[0047] (2) Substrate The substrate 2 is a sapphire sheet with a thickness of ф21.7mm and a thickness of 0.6mm. On the ф21.7mm round gemstone after cleaning, ion-sputter a Cr film with a thickness of 300A, and then sputter Au to make the thickness of the metal layer reach 1μm, and then photoetch and corrode the designed lead circuit pattern on the gemstone. Lead circui...
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