Process of preparing anatase crystal phase titanium dioxide film at low temp.
A technology of titanium dioxide and anatase, which is applied in the direction of ion implantation plating, metal material coating process, coating, etc., can solve the problems of titanium dioxide film grain growth and reduce film photoactivity
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Embodiment 1
[0015] Substrates used to prepare thin films were ultrasonically cleaned in acetone and absolute ethanol solutions for 15 minutes, then rinsed with deionized water, and dried for later use. A titanium target with a purity of 99.9% is fixed on the magnetron cathode target holder, and the substrate for preparing a thin film to be processed after cleaning and drying is fixed on the sample base of the vacuum chamber of the magnetron sputtering system. The magnetic field strength in the sputtering area on the target surface is about 2800 Gauss, and the distance from the target surface to the substrate is 60 mm. Bake the vacuum chamber before preparation, and wait for the background vacuum to 1×10 -4 After Pa, argon gas was introduced to 1Pa, and then the target was cleaned by DC glow sputtering. After the titanium target is cleaned by sputtering, oxygen is introduced. At this time, the flows of argon and oxygen are adjusted to 30 sccm and 4 sccm respectively, and the total pressur...
Embodiment 2
[0018] Substrates used to prepare thin films were ultrasonically cleaned in acetone and absolute ethanol solutions for 15 minutes, then rinsed with deionized water, and dried for later use. A titanium target with a purity of 99.9% is fixed on the magnetron cathode target holder, and the substrate for preparing a thin film to be processed after cleaning and drying is fixed on the sample base of the vacuum chamber of the magnetron sputtering system. The magnetic field strength in the sputtering area on the target surface is about 2800 Gauss, and the distance from the target surface to the substrate is 80mm. Bake the vacuum chamber before preparation, and wait for the background vacuum to 1×10 -4 After Pa, argon gas was introduced to 1Pa, and then the target was cleaned by DC glow sputtering. After the titanium target is cleaned by sputtering, oxygen is introduced. At this time, the flows of argon and oxygen are adjusted to 30 sccm and 6 sccm respectively, and the total pressure...
Embodiment 3
[0021] Substrates used to prepare thin films were ultrasonically cleaned in acetone and absolute ethanol solutions for 15 minutes, then rinsed with deionized water, and dried for later use. A titanium target with a purity of 99.9% is fixed on the magnetron cathode target holder, and the substrate for preparing a thin film to be processed after cleaning and drying is fixed on the sample base of the vacuum chamber of the magnetron sputtering system. The magnetic field strength in the sputtering area on the target surface is about 2800 Gauss, and the distance from the target surface to the substrate is 110 mm. Bake the vacuum chamber before preparation, and wait for the background vacuum to 1×10 -4 After Pa, argon gas was introduced to 1Pa, and then the target was cleaned by DC glow sputtering. After the titanium target is cleaned by sputtering, oxygen is introduced. At this time, the flows of argon and oxygen are adjusted to 30 sccm and 3 sccm respectively, and the total pressu...
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