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Stack grid-source one-side electronic injection flash memory and manufacturing method thereof

A technology of electron injection and manufacturing method, applied in semiconductor/solid-state device manufacturing, electric solid-state devices, circuits, etc., and can solve problems such as slow reading and writing speed

Inactive Publication Date: 2007-07-18
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the existing stacked gate structure, the thickness of the oxide layer under the floating gate is uniform, and there is no strong electric field that facilitates the injection of electrons into the floating gate, so the reading and writing speed is slow

Method used

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  • Stack grid-source one-side electronic injection flash memory and manufacturing method thereof
  • Stack grid-source one-side electronic injection flash memory and manufacturing method thereof
  • Stack grid-source one-side electronic injection flash memory and manufacturing method thereof

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Embodiment 1

[0026] Taking an n-channel flash memory cell as an example, the structure of the stacked gate-source side electron injection flash memory according to the present invention is described. As shown in FIG. 3, the stacked gate-source side electron injection flash memory according to the present invention includes: a source and a drain formed from a p-well formed in a semiconductor substrate, and between said source and the drain Floating gate and control gate formed sequentially above the p-well. It can be seen from FIG. 3 that the floating gate includes two oxide regions with different thicknesses, namely region A and region B.

[0027] Area A is the tunnel area, and nitrogen (N) ions are implanted in the tunnel area. During the thermal oxidation process, the growth rate of the oxide layer is slow due to the implanted nitrogen ions; area B is the gate area, and nitrogen is not implanted in the gate area B. (N) ions, the growth rate of the oxide layer is fast during the thermal ...

Embodiment 2

[0032] Taking the n-channel flash memory cell as an example, the method of manufacturing the stacked gate-source side electron injection flash memory according to the present invention will be described. Of course, the same process can also be used to manufacture p-channel flash memory cells, but the process parameters need to be adjusted appropriately.

[0033] The method for manufacturing the stack gate-source side electron injection flash memory according to the present invention comprises the following process steps:

[0034] (a) Use a p-type semiconductor wafer as a substrate, first determine the active area (AA), and form an isolation area [STI (Shallow Trench Isolation) or LOCOS (Local Oxidation of Silicon)];

[0035] (b) As shown in Figure 7, a deep n-well is formed, and a p-well is formed on the deep n-well, and an electric field is applied for ion implantation, and a threshold voltage is used to adjust the implanted ion concentration to prevent penetration ion implan...

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PUM

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Abstract

The invention discloses a new stack gate-source one-side electron injection flash memory and its manufacturing method. The memory has the stacking gate structure, and the floating gate constitutes two regions with different thickness. One region has the nitrogen ion-implantation, in which, the oxides grow slowly during the thermal oxide process, forming a relatively thinner oxide layer. The other one without nitrogen ion forms a quite thick oxide layer, and on the interface between the two oxide layers with different thickness, a strong transverse electric field engenders, to make electrons easily implant from one side of source to the floating gate, enhancing the read-write speed of memory cell.

Description

technical field [0001] The invention relates to a new flash memory and its manufacturing method, in particular to a stacked gate-source side electron injection flash memory and its manufacturing method. Background technique [0002] A key feature of non-volatile memory technology is the extensive use of floating gate cells. According to different gate structures, floating gate units can be divided into two types, one is the so-called stacked gate structure, as shown in Figure 1; the other is the split gate structure, as shown in Figure 2. Currently, the stacked gate ETOX (Erasable Tunnel Oxide) shown in Figure 1 is the preferred structure in the flash memory market. The key reasons for the success of this stacked gate ETOX are: [0003] (a) The stacked gate cells in the Erasable Programmable Read-Only Memory (EEPROM) have simple structure, high integration density and good consistency. Erasable Programmable Read-Only Memory (EEPROM) has been manufactured for many years, an...

Claims

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Application Information

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IPC IPC(8): H01L29/788H01L29/423H01L27/115H01L21/336H01L21/28H01L21/8247
Inventor 杨濬哲
Owner SEMICON MFG INT (SHANGHAI) CORP