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Semiconductor laser device

A laser device and semiconductor technology, applied in the field of GaAlAs-based compound semiconductor laser devices, can solve the problems of narrow circuit path, insufficient effect of operating voltage, small ridge structure, etc., and achieve the effect of reducing operating voltage and reducing discontinuity

Active Publication Date: 2007-08-08
SHARP FUKUYAMA LASER CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] In the ridge-type semiconductor laser device required to have an optical output of 300 mW or more in recent years, the above-mentioned structure of the GaAlAs-based semiconductor laser device as the prior art is applied, but the effect of reducing the operating voltage is insufficient due to the narrow circuit path
[0008] In addition, in order to improve the light output of the GaAlAs-based semiconductor laser device as the prior art, while reducing the n-type GaAs buffer layer 2 and the n-type Ga 1-x Al x When the impurity concentration in the As cladding layer 4 is increased to increase the crystallinity of the active layer 5 on these layers, the effect of lowering the operating voltage becomes smaller for the ridge structure.

Method used

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  • Semiconductor laser device
  • Semiconductor laser device
  • Semiconductor laser device

Examples

Experimental program
Comparison scheme
Effect test

no. 1 example

[0034] FIG. 1 is a cross-sectional view showing a GaAlAs-based compound semiconductor laser device according to a first embodiment of the present invention.

[0035] The GaAlAs-based compound semiconductor laser device (hereinafter sometimes simply referred to as a semiconductor laser device) has the following structure: an n-type GaAs substrate 10 (doped with Si; 1×10 18 cm -3 ) to form n-type Ga 0.9 al 0.1 As buffer layer 11, n-type Ga 0.5 al 0.5 As cladding layer 12, Ga 0.9 al 0.1 As active layer 13, p-type Ga 0.5 al 0.5 As cladding layer 14, p-type GaAs contact layer 15 and p-type electrode 18a, form n-type electrode 18b on the back surface of substrate 10, by p-type GaAs 0.5 al 0.5 The As cladding layer 14 and the p-type GaAs contact layer 15 form a ridge portion (ridge width: 3 μm), and GaAs current blocking layers 19 are formed on both sides of the ridge portion.

example 1

[0037] The semiconductor laser device having the ridge structure according to the first embodiment described above was manufactured in the following manner.

[0038] First, Ga 0.9 al 0.1 As layer. Here, by adjusting the flow ratio (volume ratio) in the source material gas to AsH 3 Gas: TMG gas: TMA gas: SiH 4 Gas = 50:5:1:10, forming n-type Ga 0.9 al 0.1 As buffer layer, wherein the composition ratio x of Al is 0.1, and the concentration of n conductivity type impurity is 1×10 18 cm -3 , and the film thickness is 70nm.

[0039] Next, adjust the flow ratio (volume ratio) to AsH 3 Gas: TMG gas: TMA gas: SiH 4 Gas = 10:1:1:1, whereby n-type Ga is formed according to the MOCVD method 0.5 al 0.5 As cladding layer 12, wherein the composition ratio x of Al is 0.5, the film thickness is 1 μm, and the concentration of Si is 5×10 17 cm -3 .

[0040] Next, adjust the flow ratio (volume ratio) to AsH 3 Gas: TMG gas: TMA gas = 50:5:1, whereby Ga 0.9 al 0.1 The As active la...

no. 2 example

[0050]3 is a cross-sectional view of a GaAlAs-based compound semiconductor laser device according to a second embodiment of the present invention.

[0051] The GaAlAs-based compound semiconductor laser device has the following structure: an n-type GaAs substrate 20 (doped with Si; 1×10 18 cm -3 ) to form an n-type GaAs buffer layer 26, n-type Ga 0.75 Al 0.25 As buffer layer 21, n-type Ga 0.5 Al 0.5 As cladding layer 22 (doped Si; 5×10 17 cm -3 ), Ga 0.9 Al 0.1 As multi-quantum well active layer 23 (undoped), p-type Ga 0.5 Al 0.5 As cladding layer 24 (doped with Zn; 1×10 18 cm -3 ), p-type GaAs contact layer 25 (doped with Zn; 5×10 18 cm -3 ) and p-type electrode 28, form n-type electrode 28b on the back surface of substrate 20, by p-type Ga 0.5 Al 0.5 The As cladding layer 24 and the p-type GaAs contact layer 25 form a ridge portion (ridge width: 3 μm), and GaAs current blocking layers 29 are formed on both sides of the ridge portion.

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Abstract

A semiconductor laser device, comprising a buffer layer of a first conductivity type, a clad layer of the first conductivity type, an active layer and a clad layer of a second conductivity type formed on a semiconductor substrate of the first conductivity type, wherein a band gap in the buffer layer of the first conductivity type has a value which is greater than a band gap of the semiconductor substrate and smaller than a band gap of the clad layer of the first conductivity type, and an impurity concentration in the buffer layer of the first conductivity type is higher than an impurity concentration in the clad layer of the first conductivity type.

Description

technical field [0001] The invention relates to a III-V group compound semiconductor laser device, in particular to a GaAlAs-based compound semiconductor laser device. Background technique [0002] The use of semiconductor laser devices as light sources in the recording and reproduction of optical discs as audio and video recording media, especially the use of GaAlAs-based semiconductor laser devices makes high-density recording possible. In recent years, there has been a need to increase the light output of GaAlAs-based semiconductor laser devices in order to increase the recording rate. Therefore, it is necessary to lower the operating voltage and reduce the generation of heat in order to obtain excellent reliability. [0003] However, in a GaAlAs-based semiconductor laser device, a GaAs substrate and an AlGaAs cladding layer having a high Al composition ratio formed on the substrate so as to be adjacent to the substrate have the same electrical conductivity and different...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/30H01S5/323H01S5/343
CPCH01S2301/173H01S5/32316H01S5/305H01S5/20H01S5/2219H01S5/2231
Inventor 细羽弘之
Owner SHARP FUKUYAMA LASER CO LTD