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Near-infrared high-transmission rate and multi-crystal transparent conductive oxide film and its making method

A conductive oxide, polycrystalline transparent technology, applied in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., can solve the problems of film transparency decline, conductivity limitation, etc., and achieve good application prospects, uniform film, and deposition rate high effect

Inactive Publication Date: 2007-11-28
FUDAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Because the carrier concentration is too high, the transparency of the film decreases, so it is limited to increase the conductivity of the film by increasing the carrier concentration.

Method used

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  • Near-infrared high-transmission rate and multi-crystal transparent conductive oxide film and its making method
  • Near-infrared high-transmission rate and multi-crystal transparent conductive oxide film and its making method
  • Near-infrared high-transmission rate and multi-crystal transparent conductive oxide film and its making method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] Example 1, preparation of tungsten-doped indium oxide target: In metal with a purity of 99.99% is melted into a target, and 2 wt% of tungsten wire with the same purity of 99.99% is evenly and symmetrically embedded, and the target diameter is 51mm and the thickness is 3.0mm . The substrate is a common glass slide, which has been washed by pure water, alcohol and acetone ultrasonic waves for 15 minutes each.

[0020] Substrate temperature: 322°C. The distance between the target and the substrate was fixed at 100 mm. Before film deposition, the reaction chamber was evacuated to less than 2×10 -3 Pa, then the O through the variable air pilot valve 2 And Ar gas into the reaction chamber. The working pressure in the reaction chamber is 3.0×10 -1 Pa, sputtering current is 100mA, sputtering voltage is 400V, control O 2 The partial pressure of the reaction gas is 2×10 -2 Pa. The film was prepared on an ordinary glass plate, the sputtering time was 10 minutes, and the fi...

Embodiment 2

[0021] Example 2, at a substrate temperature of 315°C, the same method as in Example 1 was used to prepare a polycrystalline IWO thin film under the following conditions: the sputtering current was 100mA, the sputtering voltage was 450V, and the O 2 and Ar gas into O 2 reaction chamber and control O 2 The partial pressure of the reaction gas is 1×10 -2 Pa. The sputtering time is 10 minutes, and the film thickness is 100 nm. The resistivity of the film is 5.0×10 -4 Ω·cm, carrier mobility is 61cm 2 / V·s, the average transmittance in the visible light range is 82%, and the average transmittance in the near-infrared region is greater than 90%.

Embodiment 3

[0022] Example 3, preparation of molybdenum-doped indium oxide target: In metal with a purity of 99.99% is melted into a target, and 3 wt% of molybdenum wire with the same purity of 99.99% is uniformly and symmetrically embedded, and the target diameter is 51mm and the thickness is 3.0mm . The substrate is a common glass slide, which has been washed by pure water, alcohol and acetone ultrasonic waves for 15 minutes each.

[0023] Substrate temperature: 350°C. The distance between the target and the substrate was fixed at 95mm. Before film deposition, the reaction chamber was evacuated to less than 2×10 -3 Pa, then the O through the variable air pilot valve 2 And Ar gas into the reaction chamber. The working pressure in the reaction chamber is 1.7Pa, the sputtering current is 200mA, the sputtering voltage is 400V, and the control O 2 The partial pressure of the reaction gas is 1.5×10 -2 Pa. The film was prepared on an ordinary glass plate, the sputtering time was 10 minu...

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Abstract

The invention discloses a making method of near infrared high-transmissivity polycrystalline transparent conductive oxide film, which is characterized by the following: adopting conductive oxide film as doped indium oxide and M (M is W and Mo); using common glass as base; reacting indium metal to dop W or Mo insert target under 300-500 deg.c through DC magnetic sputtering technique; obtaining the In2O3:M film with polycrystalline structure under fitful sputtering pressure, partial oxygen pressure, sputtering current and sputtering voltage; fitting for applying in the solar energy battery domain.

Description

technical field [0001] The invention belongs to the technical field of transparent conductive films, and in particular relates to a near-infrared high transmittance polycrystalline transparent conductive oxide film and a preparation method thereof. Background technique [0002] Transparent conductive oxide (TCO) thin films are widely used in flat panel display devices and solar cells as transparent "metal" electrodes due to their unique properties of transparency in the visible light range and good electrical conductivity. One of the most representative materials is In 2 o 3 :Sn(ITO), SnO 2 :F and ZnO:Al(AZO) films. TCO thin film materials generally have high carrier concentration and low resistivity (10 -4 Ω·cm); and a wide band gap (>3eV), so that the film has a high transmittance (>80%) in the visible light range. [0003] However, the transmittance of traditional commercial TCO films such as ITO drops sharply when the wavelength is larger than 1 μm. This seri...

Claims

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Application Information

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IPC IPC(8): H01L21/363H01L31/18C23C14/35C23C14/08
CPCY02P70/50
Inventor 张群李桂锋杨铭
Owner FUDAN UNIV
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