Solder paste and electronic device
A technology for solder paste and electronic components, which is applied in the direction of assembling printed circuits with electrical components, welding equipment, printed circuits, etc., can solve the problems of reduced bonding strength between the printed circuit board 107 and the chip-type electronic components 108, and achieves improved bonding strength, Large surface area, the effect of promoting the reaction
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no. 1 example
[0074] As the first metal material to be the metal base material, Cu powder with an average particle size of 1 μm (hereinafter referred to as "base material Cu") (melting point: 1083°C) is prepared, and electroless Sn plating or electroless plating is performed on the base material Cu. In. Then, by this electroless Sn plating or electroless In plating, a Sn film or an In film (second metal material) with a film thickness of 0.5 μm was formed on the surface of the base material Cu, thereby producing a first metal powder.
[0075] Next, as the second metal powder, Sn powder (melting point: 231°C) and In powder (melting point: 156°C) with an average particle size of 1 μm were prepared, and as the third metal powder, Cu powder with an average particle size of 0.01 μm was prepared. powder.
[0076] In addition, flux having a compounding ratio of rosin: 76% by weight, diethylene glycol diethyl ether: 22% by weight, and triethanolamine: 2% by weight was prepared.
[0077] Next, wei...
no. 2 example
[0087] As the first metal material to be the metal base material, base material Cu with an average particle diameter of 1 μm and Ag powder with an average particle diameter of 1 μm (hereinafter referred to as “base material Ag”) (melting point: 961° C.) were prepared. Next, electroless Sn plating (Examples 11 to 13 and Examples 17 to 19) or electroless In plating (Examples 14 to 16 and Examples 20 to 22) was performed on the base material Cu or the base material Ag. Then, by this electroless Sn plating or electroless In plating, a Sn film or an In film (second metal material) with a film thickness of 0.5 μm is formed on the surface of the base material Cu or the base material Ag, thereby producing the first metal powder.
[0088] Next, as in the first example, second metal powder (Cu powder or In powder) with an average particle diameter of 1 μm and Cu powders with average particle diameters of 0.01 μm, 0.30 μm, and 1.00 μm were prepared. Then, the first metal powder, second m...
no. 3 example
[0097] As the first metal material, Ag powder (melting point: 961°C), Au powder (hereinafter referred to as "base material Au") (melting point: 1064°C), Pd powder (hereinafter referred to as "base material Au"), and Pd powder (hereinafter referred to as "base material Au") with an average particle size of 1 μm were used. Material Pd") (melting point: 1554°C), as the third metal powder, Ag powder, Au powder, and Pd with an average particle size of 0.01 μm were used to produce an implementation with Table 3 in the same steps as (first embodiment) Solder paste with the compounding ratio shown in Examples 31 to 48.
[0098] In addition, predetermined amounts of the above-mentioned first metal powder and the above-mentioned second metal powder were weighed, and the first metal powder and the second metal powder were dispersed in the flux to prepare solders of Comparative Examples 31 to 36 that did not contain the third metal powder. solder paste.
[0099] Next, the multilayer cera...
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