Fluorescent powder for white light luminescent diode and preparing method thereof

A technology of light-emitting diodes and phosphors, applied in the direction of luminescent materials, chemical instruments and methods, and the use of gas discharge lamps, etc., can solve the problems of not being able to meet the needs of semiconductor lighting applications, low luminous brightness and efficacy, and achieve improved luminescence Brightness, reduction of raw material cost, high luminance effect

Active Publication Date: 2010-06-09
JIANGSU BREE OPTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0008] The purpose of the present invention is to provide a high-efficiency phosphor powder for white light-emitting diodes and its manufacturing method in view of the low luminous brightness and efficacy of the existing phosphor powder for white light-emitting diodes, which cannot well meet the application of semiconductor lighting.

Method used

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  • Fluorescent powder for white light luminescent diode and preparing method thereof
  • Fluorescent powder for white light luminescent diode and preparing method thereof
  • Fluorescent powder for white light luminescent diode and preparing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] The purity of the raw material is 99.99-99.999%, and the d of the powder is 50 = 2 ~ 4μm, d 90 10 >0.5μm Y 2 o 3 10.17g, Lu 2 o 3 1.0g, Gd 2 o 3 0.14g, Al 2 o 3 8.43g, SiO 2 0.07g, CeO 2 0.41g, Dy 2 o 3 0.01g, BaF 2 0.45g, H 3 BO 3 0.15g, after mixing evenly, put it into a corundum crucible, 2 -H 2 Under the protection of mixed gas, keep warm at 1450°C for 3 hours, cool to room temperature with the furnace, pulverize the primary synthetic powder, pass through a 300-mesh sieve, and place it in HNO with a concentration of 0.1M and a temperature of 70°C 3 solution, after stirring for 30min, wash with deionized water until neutral, wash twice with absolute alcohol, and dry; dry the dried powder again in N 2 -H 2 In a mixed atmosphere at 1520°C, hold for 6 hours, cool down to room temperature with the furnace, pulverize through a 350-mesh sieve, and obtain the chemical structure formula (Y 2.70 Lu 0.15 Gd 0.025 )(Al 4.965 Si 0.035 )O 12 : Ce 0.07 , ...

Embodiment 2

[0044] The purity of the raw material is 99.99-99.999%, and the d of the powder is 50 = 2 ~ 4μm, d 90 10 >0.5μm Y 2 o 3 9.97g, Lu 2 o 3 1.33g, Gd 2 o 3 0.011g, Al 2 o 3 8.46g, SiO 2 0.03g, CeO 2 0.29g, Pr 6 o 11 0.011g, AlF 3 0.3g, H 3 BO 3 0.2g, after mixing evenly, put it into a corundum crucible, 2 -H 2 Under the protection of mixed gas, keep warm at 1350°C for 2 hours, cool to room temperature with the furnace, pulverize the primary synthetic powder, pass through a 350-mesh sieve, put it in a HNO3 solution with a concentration of 0.8M and a temperature of 80°C, stir for 30 minutes, and use a deionized Wash with water until neutral, wash twice with absolute alcohol, and dry; dry the dried powder again in N 2 -H 2 In a mixed atmosphere at 1520°C, hold for 6 hours, cool down to room temperature with the furnace, pulverize through a 350-mesh sieve, and obtain the chemical structure formula (Y 2.65 Lu 0.2 Gd 0.0018 )(Al 4.98 Si 0.015 )O 12 : Ce 0.05 , ...

Embodiment 3

[0046] The purity of the raw material is 99.99-99.999%, and the d of the powder is 50 = 2 ~ 4μm, d 90 10 >0.5μm Y 2 o 3 8.99g, Lu 2 o 3 0.026g, Gd 2 o 3 3.63g, Al 2 o 3 8.47g, SiO 2 0.028g, CeO 2 0.69g, Dy 2 o 3 0.062g, AlF 3 0.2g, H 3 BO 3 0.45g, NH 4 After F0.2g is mixed evenly, put it into a corundum crucible, 2 -H 2 Under the protection of mixed gas, keep warm at 1350°C for 2 hours, cool down to room temperature with the furnace, pulverize the primary synthetic powder, pass through a 350 mesh sieve, and place it in HNO with a concentration of 0.8M and a temperature of 80°C 3 solution, after stirring for 30min, wash with deionized water until neutral, wash twice with absolute alcohol, and dry; dry the dried powder again in N 2 -H 2 In a mixed atmosphere at 1520°C, hold for 6 hours, cool down to room temperature with the furnace, pulverize through a 350-mesh sieve, and obtain the chemical structure formula (Y 2.39 Lu 0.004 Gd 0.6 )(Al 4.986 Si 0.014 )...

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Abstract

The invention relates to a phosphor powder used for white light emitting diode and a preparation method thereof. The phosphor is rare-earth yttrium aluminum garnet, the chemical structure formula is (YpLuqGdr)(Al1-sSis)5O12:Cex, My, wherein, M is at least one of Pr, La, Dy; P is more than or equal to0.01 but less than 3; q is more than or equal to 0.001 but less than 3; r is more than or equal to0 but less than or equal to 1.5; P plus q plus r is more than 2.5 but less than 3; s is more than or equal to 0.0002 but less than or equal to 0.5; x is more than or equal to 0.01 but less than or equal to 0.13; y is more than or equal to 0.0001 but less than or equal to 0.05. The invention adopts two-step reduction synthesis method to make phosphor powder. The phosphor powder made by this way hashigh crystallinity, high luminous brightness and proper particle diameter and particle diameter distribution.

Description

technical field [0001] The invention relates to a fluorescent powder and a preparation method thereof, in particular to a white light emitting diode fluorescent powder and a preparation method thereof. Background technique [0002] The yttrium aluminum garnet phosphor activated by cerium ions was first used as an ultra-short afterglow flying-spot scanning phosphor, which emits green light under the excitation of cathode rays. In the 1990s, Nichia Corporation of Japan successfully developed high-efficiency blue LEDs. and reported with Y 3 Al 5 o 12 : Ce 3+ (YAG:Ce) yellow light-emitting fluorescence is used as a light conversion material, and white LEDs combined with GaN blue LEDs are known to surpass incandescent lamps, New non-polluting green solid-state lighting source for fluorescent lamps and HID lamps. [0003] Yttrium aluminum garnet Y 3 Al 5 o 12 It is an important luminescent material matrix, which has the advantages of good chemical stability and radiation r...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C09K11/80H01L33/00H01L33/50
CPCY02B20/181Y02B20/00
Inventor 何锦华梁超符义兵蒋建清董岩邵起越
Owner JIANGSU BREE OPTRONICS CO LTD
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