Method and device for measuring micro-nano deep groove structure

A deep groove and groove technology, which is used in measuring devices, measuring electrical variables, using optical devices, etc., can solve the problem that it is difficult to meet the requirements of groove depth and width measurement, and achieve rapid uniformity evaluation and wide application. Foreground effect

Active Publication Date: 2008-02-27
HUAZHONG UNIV OF SCI & TECH
View PDF3 Cites 29 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

With the adoption of 90nm and more advanced node technology, the above methods are difficult to meet the re

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method and device for measuring micro-nano deep groove structure
  • Method and device for measuring micro-nano deep groove structure
  • Method and device for measuring micro-nano deep groove structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0037] DRAM deep trenches mainly include tapered deep trenches, bottle-shaped deep trenches and doped deep trenches. Using the equivalent medium theory and strict coupled wave theory, deep trenches with various structures can be equivalent to thin film stacks with optical characteristic parameters, and the Maxwell-Garnett theory is used to calculate the optical constants of the equivalent film stacks, such as equivalent Refractive index, equivalent dielectric constant, etc., and then the theoretical reflection spectrum of the equivalent film stack can be obtained by the reflectance formula. Such a theoretical reflection spectrum is related to the composition of the groove, the depth and width of the groove, so these parameters can be adjusted to change the theoretical reflection spectrum to achieve the best match with the experimentally measured reflection spectrum. Depth and feature width information.

[0038] The method of the invention can simultaneously measure the geomet...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Wavelengthaaaaaaaaaa
Login to view more

Abstract

The present invention discloses a method and device that can measure the structure of micro-nano deep trench, can simultaneously measure the structure, depth, width and thickness of thin films of micro-nano deep trench. The infrared beam is projected to silicon surface containing deep trench structure; obtain the survey reflectance spectrum by analyzing the interference light reflect from of the interface of the deep trench structure; construct the theoretical reflectance spectrum of equivalent thin film layers stack optical model of the deep trench structure with equivalent medium theory, using simulated annealing algorithm and gradient-based optimization algorithm, fit the survey reflectance spectrum through the theoretical reflectance spectrum, then extract the parameters such as depth and width of trench, to achieve a accurate measurement of width and depth of high ratio of depth and width trench. The present device can survey the typical trench structure of dynamic random access memory (DRAM), with non-contact, non-destructive and low-cost features.

Description

technical field [0001] The invention belongs to integrated circuit (IC) and micro-electromechanical system (MEMS) device measurement technology, in particular to a micro-nano deep trench (aspect ratio of more than 50:1) structure measurement method and device, the method is especially suitable for dynamic Measurement of depth and width of deep trench capacitor structures for random access memory (DRAM). Background technique [0002] In the design and manufacturing process of microelectronics and microelectromechanical systems (MEMS), deep trench structures with high aspect ratios are widely used. For example, the latest dynamic random access memory (DRAM) begins to use complex bottle-shaped deep trench capacitor structures. , Deep Reactive Ion Etching (DRIE) process can easily fabricate integrated circuits and MEMS structures with an aspect ratio of more than 50:1. In order to achieve effective process control, in-line, non-destructive and precise inspection of the dimensio...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): G01B11/22G01B11/02G01B11/06G01R27/26H01L21/00
Inventor 刘世元史铁林张传维顾华勇沈宏伟
Owner HUAZHONG UNIV OF SCI & TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap