Method for preparing p-type copper-sulfur-containing transparent conductor film
A technology of transparent conductive film and copper-sulfur, which is applied in vacuum evaporation plating, coating, sputtering plating, etc., can solve the problems that the research on sulfide film deposition has not been reported.
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Example Embodiment
[0027] Example 1:
[0028] CuAlS obtained by vacuum solid phase reaction and SPS sintering 2 The circular block is the target, and the diameter of the target is 15mm. The quartz glass sheet is the substrate (substrate), and is ultrasonically cleaned with deionized water, dilute HCL, acetone, absolute ethanol, and deionized water for 20 minutes each. The distance between the surface of the fixed target and the surface of the substrate is about 5 cm.
[0029] Maintain high vacuum (10 -4 Pa), the substrate temperature is controlled at 600℃, the laser energy is 120mJ, the starting frequency is 1Hz, the pre-deposition is 5min, and the frequency is changed to 5Hz, the deposition time is 60min, the deposition is finished, wait for the temperature to drop to room temperature, take it out, and get Amorphous CuAlS 2 Thin film (XRD see Figure 1). The film thickness is not very uniform, the edges are thin, and the middle is thick. The scanning electron microscope observation is between 50 and...
Example Embodiment
[0030] Example 2:
[0031] Similar to Example 1, the difference is that Ar is used as the working atmosphere, and the working pressure is 10 Pa. The obtained amorphous CuAlS 2 (XRD is similar to Example 1) The film thickness is uniform and the thickness is 100nm. The ultraviolet-near infrared transmission spectrum (Figure 2) shows that the average transmittance in the visible light range is greater than 75%. The electrical conductivity test shows that it has p-type conductivity (the Seebeck coefficient in Table 1 is a positive value), the conductivity at variable temperature (150K~350K) is shown in Figure 3, and the room temperature conductivity is about 2S / cm (see Table 1).
Example Embodiment
[0032] Example 3:
[0033] Similar to embodiment 2, except that the Si wafer is used as the substrate to obtain amorphous CuAlS 2 The film (XRD is similar to Example 1), the thickness of the film is about 100nm, the measured room temperature conductivity is similar to that of Example 2 (see Table 1), and the conductivity test shows that it has p-type conductivity (Seebeck coefficient in Table 1 is Positive value).
PUM
Property | Measurement | Unit |
---|---|---|
Conductivity at room temperature | aaaaa | aaaaa |
Thickness | aaaaa | aaaaa |
Conductivity at room temperature | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap